Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

R. P. Gupta; O. D. Iyore; K. Xiong; J. B. White; Kyeongjae Cho; Husam N. Alshareef; B. E. Gnade

doi:10.1149/1.3196237

Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

R. P. Gupta, O. D. Iyore, K. Xiong, J. B. White, Kyeongjae Cho, Husam N. Alshareef, B. E. Gnade

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29 Scopus citations

Abstract

Sputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. © 2009 The Electrochemical Society.

Original language	English (US)
Pages (from-to)	H395
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	10
DOIs	https://doi.org/10.1149/1.3196237
State	Published - Aug 13 2009

ASJC Scopus subject areas

General Materials Science
General Chemical Engineering
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3196237

https://repository.kaust.edu.sa/bitstream/10754/555771/1/Electrochem.%20Solid-State%20Lett.-2009-Gupta-H395-7.pdf

Cite this

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title = "Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices",

abstract = "Sputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. {\textcopyright} 2009 The Electrochemical Society.",

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AU - Gupta, R. P.

AU - Iyore, O. D.

AU - Xiong, K.

AU - White, J. B.

AU - Cho, Kyeongjae

AU - Alshareef, Husam N.

AU - Gnade, B. E.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2009/8/13

Y1 - 2009/8/13

N2 - Sputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. © 2009 The Electrochemical Society.

AB - Sputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. © 2009 The Electrochemical Society.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

Abstract

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