TY - JOUR
T1 - Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors
AU - Park, Jihoon
AU - Alshammari, Fwzah Hamud
AU - Wang, Zhenwei
AU - Alshareef, Husam N.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors wish to thank Pradipta Nayak for some technical discussions, and core lab staff for their excellent support.
PY - 2016/11/29
Y1 - 2016/11/29
N2 - Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.
AB - Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.
UR - http://hdl.handle.net/10754/622109
UR - http://onlinelibrary.wiley.com/doi/10.1002/admi.201600713/full
UR - http://www.scopus.com/inward/record.url?scp=85027929393&partnerID=8YFLogxK
U2 - 10.1002/admi.201600713
DO - 10.1002/admi.201600713
M3 - Article
SN - 2196-7350
VL - 3
SP - 1600713
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 24
ER -