Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks

C. L. Hinkle; R. V. Galatage; R. A. Chapman; E. M. Vogel; Husam N. Alshareef; C. Freeman; E. Wimmer; H. Niimi; A. Li-Fatou; J. B. Shaw; J. J. Chambers

doi:10.1063/1.3353993

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks

C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, Husam N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, J. J. Chambers

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Abstract

Effective work function (EWF) changes of TiN/HfO2annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achieved with anneals that incorporate oxygen throughout the TiN with [O]=2.8×1021 cm−3 near the TiN/HfO2interface. However, further increasing the oxygen concentration via more aggressive anneals results in a relative decrease of the EWF and increase in electrical thickness. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2interface cause the formation of dipoles that increase the EWF.

Original language	English (US)
Pages (from-to)	103502
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3353993
State	Published - Mar 9 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Hinkle, C. L., Galatage, R. V., Chapman, R. A., Vogel, E. M., Alshareef, H. N., Freeman, C., Wimmer, E., Niimi, H., Li-Fatou, A., Shaw, J. B., & Chambers, J. J. (2010). Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks. Applied Physics Letters, 96(10), 103502. https://doi.org/10.1063/1.3353993

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title = "Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks",

abstract = "Effective work function (EWF) changes of TiN/HfO2annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achieved with anneals that incorporate oxygen throughout the TiN with [O]=2.8×1021 cm−3 near the TiN/HfO2interface. However, further increasing the oxygen concentration via more aggressive anneals results in a relative decrease of the EWF and increase in electrical thickness. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2interface cause the formation of dipoles that increase the EWF.",

author = "Hinkle, {C. L.} and Galatage, {R. V.} and Chapman, {R. A.} and Vogel, {E. M.} and Alshareef, {Husam N.} and C. Freeman and E. Wimmer and H. Niimi and A. Li-Fatou and Shaw, {J. B.} and Chambers, {J. J.}",

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doi = "10.1063/1.3353993",

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Hinkle, CL, Galatage, RV, Chapman, RA, Vogel, EM, Alshareef, HN, Freeman, C, Wimmer, E, Niimi, H, Li-Fatou, A, Shaw, JB & Chambers, JJ 2010, 'Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks', Applied Physics Letters, vol. 96, no. 10, pp. 103502. https://doi.org/10.1063/1.3353993

TY - JOUR

T1 - Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks

AU - Hinkle, C. L.

AU - Galatage, R. V.

AU - Chapman, R. A.

AU - Vogel, E. M.

AU - Alshareef, Husam N.

AU - Freeman, C.

AU - Wimmer, E.

AU - Niimi, H.

AU - Li-Fatou, A.

AU - Shaw, J. B.

AU - Chambers, J. J.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2010/3/9

Y1 - 2010/3/9

N2 - Effective work function (EWF) changes of TiN/HfO2annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achieved with anneals that incorporate oxygen throughout the TiN with [O]=2.8×1021 cm−3 near the TiN/HfO2interface. However, further increasing the oxygen concentration via more aggressive anneals results in a relative decrease of the EWF and increase in electrical thickness. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2interface cause the formation of dipoles that increase the EWF.

AB - Effective work function (EWF) changes of TiN/HfO2annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achieved with anneals that incorporate oxygen throughout the TiN with [O]=2.8×1021 cm−3 near the TiN/HfO2interface. However, further increasing the oxygen concentration via more aggressive anneals results in a relative decrease of the EWF and increase in electrical thickness. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2interface cause the formation of dipoles that increase the EWF.

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DO - 10.1063/1.3353993

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks

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