TY - JOUR
T1 - Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides.
AU - Aljarb, Areej
AU - Min, Jiacheng
AU - Hakami, Marim A.
AU - Fu, Jui-Han
AU - Albaridy, Rehab
AU - Wan, Yi
AU - Lopatin, Sergei
AU - Kaltsas, Dimitrios
AU - Naphade, Dipti
AU - Yengel, Emre
AU - Hedhili, Mohamed N.
AU - Sait, Roaa
AU - Emwas, Abdul-Hamid M.
AU - Kutbee, Arwa
AU - Alsabban, Merfat
AU - Huang, Kuo-Wei
AU - Shih, Kaimin
AU - Tsetseris, Leonidas
AU - Anthopoulos, Thomas D.
AU - Tung, Vincent
AU - Li, Lain-Jong
N1 - KAUST Repository Item: Exported on 2023-06-16
Acknowledgements: L. J. Li thanks the support from the Jockey Club Hong Kong to the JC STEM lab of 3DIC and the Research Grant of the Council of Hong Kong (CRS_PolyU502/22). Y. Wan and L. J. Li acknowledge the support from the National Key R&D Project of China (2022YFB4044100). A. Aljarb thanks P. Karagiannis for constructive criticism of the manuscript.
PY - 2023/5/30
Y1 - 2023/5/30
N2 - Growing continuous monolayer films of transition-metal dichalcogenides (TMDs) without the disruption of grain boundaries is essential to realize the full potential of these materials for future electronics and optoelectronics, but it remains a formidable challenge. It is generally believed that controlling the TMDs orientations on epitaxial substrates stems from matching the atomic registry, symmetry, and penetrable van der Waals forces. Interfacial reconstruction within the exceedingly narrow substrate-epilayer gap has been anticipated. However, its role in the growth mechanism has not been intensively investigated. Here, we report the experimental conformation of an interfacial reconstructed (IR) layer within the substrate-epilayer gap. Such an IR layer profoundly impacts the orientations of nucleating TMDs domains and, thus, affects the materials' properties. These findings provide deeper insights into the buried interface that could have profound implications for the development of TMD-based electronics and optoelectronics.
AB - Growing continuous monolayer films of transition-metal dichalcogenides (TMDs) without the disruption of grain boundaries is essential to realize the full potential of these materials for future electronics and optoelectronics, but it remains a formidable challenge. It is generally believed that controlling the TMDs orientations on epitaxial substrates stems from matching the atomic registry, symmetry, and penetrable van der Waals forces. Interfacial reconstruction within the exceedingly narrow substrate-epilayer gap has been anticipated. However, its role in the growth mechanism has not been intensively investigated. Here, we report the experimental conformation of an interfacial reconstructed (IR) layer within the substrate-epilayer gap. Such an IR layer profoundly impacts the orientations of nucleating TMDs domains and, thus, affects the materials' properties. These findings provide deeper insights into the buried interface that could have profound implications for the development of TMD-based electronics and optoelectronics.
UR - http://hdl.handle.net/10754/692276
UR - https://pubs.acs.org/doi/10.1021/acsnano.2c12103
U2 - 10.1021/acsnano.2c12103
DO - 10.1021/acsnano.2c12103
M3 - Article
C2 - 37249346
SN - 1936-0851
VL - 17
SP - 10010
EP - 10018
JO - ACS Nano
JF - ACS Nano
IS - 11
ER -