Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

Tri B. Susilo; M. A. Alsunaidi; Chao Shen; Boon S. Ooi

doi:10.1109/IEEEGCC.2015.7060090

Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

Tri B. Susilo, M. A. Alsunaidi, Chao Shen, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.

Original language	English (US)
Title of host publication	2015 IEEE 8th GCC Conference & Exhibition
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)	9781479984220
DOIs	https://doi.org/10.1109/IEEEGCC.2015.7060090
State	Published - Feb 2015

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title = "Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells",

abstract = "Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. {\textcopyright} 2015 IEEE.",

author = "Susilo, {Tri B.} and Alsunaidi, {M. A.} and Chao Shen and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2015",

month = feb,

doi = "10.1109/IEEEGCC.2015.7060090",

language = "English (US)",

isbn = "9781479984220",

booktitle = "2015 IEEE 8th GCC Conference & Exhibition",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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T1 - Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

AU - Susilo, Tri B.

AU - Alsunaidi, M. A.

AU - Shen, Chao

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/2

Y1 - 2015/2

N2 - Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.

AB - Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.

UR - http://hdl.handle.net/10754/565019

UR - http://ieeexplore.ieee.org/document/7060090/

UR - http://www.scopus.com/inward/record.url?scp=84929094018&partnerID=8YFLogxK

U2 - 10.1109/IEEEGCC.2015.7060090

DO - 10.1109/IEEEGCC.2015.7060090

M3 - Conference contribution

SN - 9781479984220

BT - 2015 IEEE 8th GCC Conference & Exhibition

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

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