Interpretation of Coulomb oscillations in carbon-nanotube-based field-effect transistors

Keyphrases

• Field-effect Transistors 100%
• Carbon Nanotubes 100%
• Multi-walled Carbon Nanotubes (MWCNTs) 100%
• Coulomb Oscillation 100%
• Channel Current 66%
• Long Tube 66%
• Single-walled Carbon Nanotubes Bundles 66%
• Bias Voltage 33%
• Voltage Dependence 33%
• Oscillation 33%
• Increased Temperature 33%
• Gate Voltage 33%
• Temperature Effect 33%
• Contour Lines 33%
• Drain Voltage 33%
• Electrostatic Potential 33%
• Diamond-like 33%
• Source-drain Electrode 33%
• Electrode Contact 33%
• Charge Trapping 33%
• Long Channel 33%
• Single Charge 33%
• Coulomb Blockade 33%
• Current Suppression 33%
• Tube Electrode 33%
• Short Tubes 33%
• Voltage Plane 33%
• Electrometer 33%

Engineering

• Field-Effect Transistor 100%
• Single-Walled Carbon Nanotube 100%
• Carbon Nanotubes 100%
• Drain Voltage 20%
• Bias Voltage 20%
• Gate Voltage 20%
• Increasing Temperature 20%
• Drain Electrode 20%
• Electrode Contact 20%
• Contour Line 20%
• Diamond 20%
• Electrostatic Potential 20%
• Coulomb Blockade 20%