Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)

B. H. Lee; C. D. Young; R. Choi; J. H. Sim; G. Bersuker; C. Y. Kang; R. Harris; G. A. Brown; K. Matthews; S. C. Song; N. Moumen; J. Barnett; P. Lysaght; K. S. Choi; H. C. Wen; C. Huffman; H. Alshareef; P. Majhi; S. Gopalan; J. Peterson; P. Kirsh; H. J. Li; J. Gutt; M. Gardner; H. R. Huff; P. Zeitzoff; R. W. Murto; L. Larson; C. Ramiller

Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)

B. H. Lee^*, C. D. Young, R. Choi, J. H. Sim, G. Bersuker, C. Y. Kang, R. Harris, G. A. Brown, K. Matthews, S. C. Song, N. Moumen, J. Barnett, P. Lysaght, K. S. Choi, H. C. Wen, C. Huffman, H. Alshareef, P. Majhi, S. Gopalan, J. PetersonP. Kirsh, H. J. Li, J. Gutt, M. Gardner, H. R. Huff, P. Zeitzoff, R. W. Murto, L. Larson, C. Ramiller

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

63 Scopus citations

Abstract

Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as V_th instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO₂ devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.

Original language	English (US)
Pages (from-to)	859-862
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 2004
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: Dec 13 2004 → Dec 15 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

Lee, B. H., Young, C. D., Choi, R., Sim, J. H., Bersuker, G., Kang, C. Y., Harris, R., Brown, G. A., Matthews, K., Song, S. C., Moumen, N., Barnett, J., Lysaght, P., Choi, K. S., Wen, H. C., Huffman, C., Alshareef, H., Majhi, P., Gopalan, S., ... Ramiller, C. (2004). Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE). Technical Digest - International Electron Devices Meeting, IEDM, 859-862.

@article{1eee2183d0844aaca40155e816da29a6,

title = "Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)",

abstract = "Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as Vth instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO2 devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.",

author = "Lee, {B. H.} and Young, {C. D.} and R. Choi and Sim, {J. H.} and G. Bersuker and Kang, {C. Y.} and R. Harris and Brown, {G. A.} and K. Matthews and Song, {S. C.} and N. Moumen and J. Barnett and P. Lysaght and Choi, {K. S.} and Wen, {H. C.} and C. Huffman and H. Alshareef and P. Majhi and S. Gopalan and J. Peterson and P. Kirsh and Li, {H. J.} and J. Gutt and M. Gardner and Huff, {H. R.} and P. Zeitzoff and Murto, {R. W.} and L. Larson and C. Ramiller",

year = "2004",

language = "English (US)",

pages = "859--862",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

Lee, BH, Young, CD, Choi, R, Sim, JH, Bersuker, G, Kang, CY, Harris, R, Brown, GA, Matthews, K, Song, SC, Moumen, N, Barnett, J, Lysaght, P, Choi, KS, Wen, HC, Huffman, C, Alshareef, H, Majhi, P, Gopalan, S, Peterson, J, Kirsh, P, Li, HJ, Gutt, J, Gardner, M, Huff, HR, Zeitzoff, P, Murto, RW, Larson, L & Ramiller, C 2004, 'Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)', Technical Digest - International Electron Devices Meeting, IEDM, pp. 859-862.

TY - JOUR

T1 - Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)

AU - Lee, B. H.

AU - Young, C. D.

AU - Choi, R.

AU - Sim, J. H.

AU - Bersuker, G.

AU - Kang, C. Y.

AU - Harris, R.

AU - Brown, G. A.

AU - Matthews, K.

AU - Song, S. C.

AU - Moumen, N.

AU - Barnett, J.

AU - Lysaght, P.

AU - Choi, K. S.

AU - Wen, H. C.

AU - Huffman, C.

AU - Alshareef, H.

AU - Majhi, P.

AU - Gopalan, S.

AU - Peterson, J.

AU - Kirsh, P.

AU - Li, H. J.

AU - Gutt, J.

AU - Gardner, M.

AU - Huff, H. R.

AU - Zeitzoff, P.

AU - Murto, R. W.

AU - Larson, L.

AU - Ramiller, C.

PY - 2004

Y1 - 2004

N2 - Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as Vth instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO2 devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.

AB - Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as Vth instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO2 devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.

UR - http://www.scopus.com/inward/record.url?scp=21644465398&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:21644465398

SN - 0163-1918

SP - 859

EP - 862

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)

Abstract

ASJC Scopus subject areas

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