TY - JOUR
T1 - Intrinsic Dynamics of Quantum-Dash Lasers
AU - Chen, Cheng
AU - Djie, Hery Susanto
AU - Hwang, James C. M.
AU - Koch, Thomas L.
AU - Lester, Luke F.
AU - Ooi, Boon S.
AU - Wang, Yang
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2011/2/18
Y1 - 2011/2/18
N2 - Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes. © 2011 IEEE.
AB - Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes. © 2011 IEEE.
UR - http://hdl.handle.net/10754/312990
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5713805
UR - http://www.scopus.com/inward/record.url?scp=80053948930&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2010.2103373
DO - 10.1109/JSTQE.2010.2103373
M3 - Article
SN - 1077-260X
VL - 17
SP - 1167
EP - 1174
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
IS - 5
ER -