Intrinsic Dynamics of Quantum-Dash Lasers

Cheng Chen, Hery Susanto Djie, James C. M. Hwang, Thomas L. Koch, Luke F. Lester, Boon S. Ooi, Yang Wang

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes. © 2011 IEEE.
Original languageEnglish (US)
Pages (from-to)1167-1174
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number5
StatePublished - Feb 18 2011


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