Inverse problems for semiconductors: models and methods

A. Leitão, P. A. Markowich, J. P. Zubelli

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

4 Scopus citations


The starting point of the mathematical model discussed in this chapter is the system of drift diffusion equations (see (6.2.1a)–(6.2.1f) below). This system of equations, derived more than fifty years ago [vRo50], is the most widely used to describe semiconductor devices. For the current state of technology, this system represents an accurate compromise between efficient numerical solvability of the mathematical model and realistic description of the underlying physics [Mar86, MRS90, Sel84].

Original languageEnglish (US)
Title of host publicationModeling and Simulation in Science, Engineering and Technology
PublisherSpringer Basel
Number of pages33
StatePublished - 2007
Externally publishedYes

Publication series

NameModeling and Simulation in Science, Engineering and Technology
ISSN (Print)2164-3679
ISSN (Electronic)2164-3725

ASJC Scopus subject areas

  • Modeling and Simulation
  • General Engineering
  • Fluid Flow and Transfer Processes
  • Computational Mathematics


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