Keyphrases
Aluminum Gallium Nitride (AlGaN)
100%
Substrate Temperature
100%
Heterostructure
100%
AlN Buffer Layer
100%
AlGaN Film
80%
Single Crystal
40%
Adatoms
40%
Growth Quality
40%
High Temperature
20%
Band Gap
20%
Crystal Quality
20%
Growth Conditions
20%
Surface Morphology
20%
Smooth Surface
20%
Vegard's Law
20%
Growth Parameters
20%
Defect Band
20%
Defect Density
20%
Film Growth
20%
Epitaxial Film
20%
Growth Temperature
20%
Content Variation
20%
GaN Films
20%
Layer Growth
20%
Low Mobility
20%
Reduced Defects
20%
Si(111)
20%
Low Temperature Growth
20%
Defect Generation
20%
Surface Defect States
20%
Aluminum Content
20%
Band Ratio
20%
Si(111) Substrate
20%
Rocking Curve
20%
Photoluminescence Analysis
20%
Compound Formation
20%
Growth Optimization
20%
Solar-blind Photodetection
20%
Engineering
Heterostructures
100%
Substrate Temperature
100%
Buffer Layer
100%
Defects
66%
Growth Condition
33%
Growth Parameter
33%
Smooth Surface
33%
Crystalline Quality
33%
Photodetection
33%
Compound Formation
33%
Low Growth Temperature
33%
Demonstrates
33%
Vegards Law
33%
Aluminum Composition
33%
Surface Morphology
33%
Growth Temperature
33%
Surface Defect
33%
Defect Density
33%
Epitaxial Film
33%
Material Science
Heterojunction
100%
Buffer Layer
100%
Aluminum Nitride
100%
Crystalline Material
37%
Surface Morphology
12%
Defect Density
12%
Surface Defect
12%
Photoluminescence
12%
Epitaxial Film
12%
Film
12%
Film Growth
12%