TY - JOUR
T1 - Investigation of a novel AlZnN semiconductor alloy
AU - Trapalis, A.
AU - Fry, P. W.
AU - Kennedy, Kenneth Leslie
AU - Farrer, I.
AU - Kean, A.
AU - Sharman, J.
AU - Heffernan, J.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors wish to acknowledge funding by the EPSRC (Engineering and Physical Science Research Council, EP/M507611/1) the two funders contributed to the same grant ID in an Industrial CASE Award and Johnson Matthey PLC (Award No. 14550005). The data presented in this paper is available to download for free with the following DOI: 10.15131/shef.data.12327560.
PY - 2020/7/20
Y1 - 2020/7/20
N2 - The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
AB - The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
UR - http://hdl.handle.net/10754/664522
UR - https://linkinghub.elsevier.com/retrieve/pii/S2590150820300156
UR - http://www.scopus.com/inward/record.url?scp=85088380107&partnerID=8YFLogxK
U2 - 10.1016/j.mlblux.2020.100052
DO - 10.1016/j.mlblux.2020.100052
M3 - Article
SN - 2590-1508
VL - 7
SP - 100052
JO - Materials Letters: X
JF - Materials Letters: X
ER -