Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells

Daisuke Iida; Shen Lu; Sota Hirahara; Kazumasa Niwa; Satoshi Kamiyama; Kazuhiro Ohkawa

doi:10.7567/JJAP.55.05FJ06

Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells

Daisuke Iida, Shen Lu, Sota Hirahara, Kazumasa Niwa, Satoshi Kamiyama, Kazuhiro Ohkawa

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We investigated InGaN-based amber light-emitting diodes (LEDs) with AlN/(Al)GaN barrier layers grown by metalorganic vapor-phase epitaxy. Tensilely strained AlN/Al_0.03Ga_0.97N barriers improved the crystalline quality of compressively strained InGaN quantum wells. We found that strain compensation among wells and barriers improves the external quantum efficiency of high-In-content InGaN-based amber LEDs. The amber LEDs with AlN/Al_0.03Ga_0.97N barriers have shown an electroluminescence (EL) intensity approximately 2.5-fold that of LEDs with the AlN/GaN barriers at 20 mA.

Original language	English (US)
Article number	05FJ06
Journal	Japanese Journal of Applied Physics
Volume	55
Issue number	5
DOIs	https://doi.org/10.7567/JJAP.55.05FJ06
State	Published - May 2016
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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@article{8583976fc06d4e2684c312389f02594b,

title = "Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells",

abstract = "We investigated InGaN-based amber light-emitting diodes (LEDs) with AlN/(Al)GaN barrier layers grown by metalorganic vapor-phase epitaxy. Tensilely strained AlN/Al0.03Ga0.97N barriers improved the crystalline quality of compressively strained InGaN quantum wells. We found that strain compensation among wells and barriers improves the external quantum efficiency of high-In-content InGaN-based amber LEDs. The amber LEDs with AlN/Al0.03Ga0.97N barriers have shown an electroluminescence (EL) intensity approximately 2.5-fold that of LEDs with the AlN/GaN barriers at 20 mA.",

author = "Daisuke Iida and Shen Lu and Sota Hirahara and Kazumasa Niwa and Satoshi Kamiyama and Kazuhiro Ohkawa",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = may,

doi = "10.7567/JJAP.55.05FJ06",

language = "English (US)",

volume = "55",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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T1 - Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells

AU - Iida, Daisuke

AU - Lu, Shen

AU - Hirahara, Sota

AU - Niwa, Kazumasa

AU - Kamiyama, Satoshi

AU - Ohkawa, Kazuhiro

PY - 2016/5

Y1 - 2016/5

N2 - We investigated InGaN-based amber light-emitting diodes (LEDs) with AlN/(Al)GaN barrier layers grown by metalorganic vapor-phase epitaxy. Tensilely strained AlN/Al0.03Ga0.97N barriers improved the crystalline quality of compressively strained InGaN quantum wells. We found that strain compensation among wells and barriers improves the external quantum efficiency of high-In-content InGaN-based amber LEDs. The amber LEDs with AlN/Al0.03Ga0.97N barriers have shown an electroluminescence (EL) intensity approximately 2.5-fold that of LEDs with the AlN/GaN barriers at 20 mA.

AB - We investigated InGaN-based amber light-emitting diodes (LEDs) with AlN/(Al)GaN barrier layers grown by metalorganic vapor-phase epitaxy. Tensilely strained AlN/Al0.03Ga0.97N barriers improved the crystalline quality of compressively strained InGaN quantum wells. We found that strain compensation among wells and barriers improves the external quantum efficiency of high-In-content InGaN-based amber LEDs. The amber LEDs with AlN/Al0.03Ga0.97N barriers have shown an electroluminescence (EL) intensity approximately 2.5-fold that of LEDs with the AlN/GaN barriers at 20 mA.

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DO - 10.7567/JJAP.55.05FJ06

M3 - Article

AN - SCOPUS:84965062226

SN - 0021-4922

VL - 55

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5

M1 - 05FJ06

ER -

Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells

Abstract

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