Investigation of carrier dynamics on InAs quantum dots embedded in InGaAsGaAs quantum wells based on time-resolved pump and probe differential photoluminescence

Xiaodong Mu; Yujie J. Ding; Boon S. Ooi; Mark Hopkinson

doi:10.1063/1.2374801

Investigation of carrier dynamics on InAs quantum dots embedded in InGaAsGaAs quantum wells based on time-resolved pump and probe differential photoluminescence

Xiaodong Mu^*, Yujie J. Ding, Boon S. Ooi, Mark Hopkinson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay between them. Their results obtained on the InAs quantum dots embedded in InGaAsGaAs quantum wells using such a technique indicate that the exciton decay time, integrated photoluminescence intensity, and photoluminescence linewidth exhibit unique dependences on temperature.

Original language	English (US)
Article number	181924
Journal	Applied Physics Letters
Volume	89
Issue number	18
DOIs	https://doi.org/10.1063/1.2374801
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{7ba3923567c14dc1a7b0b15767ce6f20,

title = "Investigation of carrier dynamics on InAs quantum dots embedded in InGaAsGaAs quantum wells based on time-resolved pump and probe differential photoluminescence",

abstract = "The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay between them. Their results obtained on the InAs quantum dots embedded in InGaAsGaAs quantum wells using such a technique indicate that the exciton decay time, integrated photoluminescence intensity, and photoluminescence linewidth exhibit unique dependences on temperature.",

author = "Xiaodong Mu and Ding, {Yujie J.} and Ooi, {Boon S.} and Mark Hopkinson",

note = "Funding Information: This work has been supported by U.S. DARPA and AFOSR. Two of the authors (Y.I.D. and B.S.O.) are also members of the Center for Optical Technologies, Lehigh University. One of the authors (Y.I.D.) is also an affiliate member of the Center for Advanced Materials and Nanotechnology, Lehigh University.",

year = "2006",

doi = "10.1063/1.2374801",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "18",

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TY - JOUR

T1 - Investigation of carrier dynamics on InAs quantum dots embedded in InGaAsGaAs quantum wells based on time-resolved pump and probe differential photoluminescence

AU - Mu, Xiaodong

AU - Ding, Yujie J.

AU - Ooi, Boon S.

AU - Hopkinson, Mark

N1 - Funding Information: This work has been supported by U.S. DARPA and AFOSR. Two of the authors (Y.I.D. and B.S.O.) are also members of the Center for Optical Technologies, Lehigh University. One of the authors (Y.I.D.) is also an affiliate member of the Center for Advanced Materials and Nanotechnology, Lehigh University.

PY - 2006

Y1 - 2006

N2 - The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay between them. Their results obtained on the InAs quantum dots embedded in InGaAsGaAs quantum wells using such a technique indicate that the exciton decay time, integrated photoluminescence intensity, and photoluminescence linewidth exhibit unique dependences on temperature.

AB - The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay between them. Their results obtained on the InAs quantum dots embedded in InGaAsGaAs quantum wells using such a technique indicate that the exciton decay time, integrated photoluminescence intensity, and photoluminescence linewidth exhibit unique dependences on temperature.

UR - http://www.scopus.com/inward/record.url?scp=33750695673&partnerID=8YFLogxK

U2 - 10.1063/1.2374801

DO - 10.1063/1.2374801

M3 - Article

AN - SCOPUS:33750695673

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181924

ER -

Investigation of carrier dynamics on InAs quantum dots embedded in InGaAsGaAs quantum wells based on time-resolved pump and probe differential photoluminescence

Abstract

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