Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H2 gas generation

Katsushi Fujii; Takashi Ito; Masato Ono; Yasuhiro Iwaki; Takafumi Yao; Kazuhiro Ohkawa

doi:10.1002/pssc.200674917

Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H₂ gas generation

Katsushi Fujii^*, Takashi Ito, Masato Ono, Yasuhiro Iwaki, Takafumi Yao, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Surface morphology and chemical composition at n-type GaN surface after photoelectrochemical reactions were investigated. Whisker-like Ga oxides were observed in the lower pH solutions and hexagonal columns were observed in the higher pH solutions. The results indicate that different reactions occur in the different pH solutions. Dissolution amount was the lowest at a neutral pH solution.

Original language	English (US)
Pages (from-to)	2650-2653
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674917
State	Published - 2007
Externally published	Yes
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: Oct 22 2006 → Oct 27 2006

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200674917

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title = "Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H2 gas generation",

abstract = "Surface morphology and chemical composition at n-type GaN surface after photoelectrochemical reactions were investigated. Whisker-like Ga oxides were observed in the lower pH solutions and hexagonal columns were observed in the higher pH solutions. The results indicate that different reactions occur in the different pH solutions. Dissolution amount was the lowest at a neutral pH solution.",

author = "Katsushi Fujii and Takashi Ito and Masato Ono and Yasuhiro Iwaki and Takafumi Yao and Kazuhiro Ohkawa",

year = "2007",

doi = "10.1002/pssc.200674917",

language = "English (US)",

volume = "4",

pages = "2650--2653",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

number = "7",

note = "International Workshop on Nitride Semiconductors, IWN 2006 ; Conference date: 22-10-2006 Through 27-10-2006",

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T1 - Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H2 gas generation

AU - Fujii, Katsushi

AU - Ito, Takashi

AU - Ono, Masato

AU - Iwaki, Yasuhiro

AU - Yao, Takafumi

AU - Ohkawa, Kazuhiro

PY - 2007

Y1 - 2007

N2 - Surface morphology and chemical composition at n-type GaN surface after photoelectrochemical reactions were investigated. Whisker-like Ga oxides were observed in the lower pH solutions and hexagonal columns were observed in the higher pH solutions. The results indicate that different reactions occur in the different pH solutions. Dissolution amount was the lowest at a neutral pH solution.

AB - Surface morphology and chemical composition at n-type GaN surface after photoelectrochemical reactions were investigated. Whisker-like Ga oxides were observed in the lower pH solutions and hexagonal columns were observed in the higher pH solutions. The results indicate that different reactions occur in the different pH solutions. Dissolution amount was the lowest at a neutral pH solution.

UR - http://www.scopus.com/inward/record.url?scp=40549103725&partnerID=8YFLogxK

U2 - 10.1002/pssc.200674917

DO - 10.1002/pssc.200674917

M3 - Conference article

AN - SCOPUS:40549103725

SN - 1862-6351

VL - 4

SP - 2650

EP - 2653

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7

T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H₂ gas generation

Abstract

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