Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces

Tao Liang; W. Windl; Sergei Lopatin; G. Duscher

doi:10.1109/SISPAD.2003.1233657

Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces

Tao Liang, W. Windl, Sergei Lopatin, G. Duscher

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Citations (SciVal)

Abstract

The atomic structure of the interface between Ge and SiO₂ - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO₂ interface with probably small fractions of Ge in the oxide.

Original language	English (US)
Title of host publication	SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	143-146
Number of pages	4
ISBN (Electronic)	0780378261
DOIs	https://doi.org/10.1109/SISPAD.2003.1233657
State	Published - Jan 1 2003
Event	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States Duration: Sep 3 2003 → Sep 5 2003

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2003-January

Other

Other	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
Country/Territory	United States
City	Boston
Period	09/3/03 → 09/5/03

Keywords

Atomic measurements
Educational institutions
Electrons
Image resolution
Impurities
Materials science and technology
Oxidation
Power engineering and energy
Semiconductor process modeling
Substrates

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Access to Document

10.1109/SISPAD.2003.1233657

Cite this

Liang, T., Windl, W., Lopatin, S., & Duscher, G. (2003). Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 143-146). [1233657] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233657

Liang, Tao ; Windl, W. ; Lopatin, Sergei et al. / Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 143-146 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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abstract = "The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.",

keywords = "Atomic measurements, Educational institutions, Electrons, Image resolution, Impurities, Materials science and technology, Oxidation, Power engineering and energy, Semiconductor process modeling, Substrates",

author = "Tao Liang and W. Windl and Sergei Lopatin and G. Duscher",

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Liang, T, Windl, W, Lopatin, S & Duscher, G 2003, Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. in SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices., 1233657, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 143-146, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, United States, 09/3/03. https://doi.org/10.1109/SISPAD.2003.1233657

Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. / Liang, Tao; Windl, W.; Lopatin, Sergei et al.
SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 143-146 1233657 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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KW - Electrons

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KW - Power engineering and energy

KW - Semiconductor process modeling

KW - Substrates

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Liang T, Windl W, Lopatin S, Duscher G. Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc. 2003. p. 143-146. 1233657. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2003.1233657