Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces

Tao Liang; W. Windl; S. Lopatin; G. Duscher

doi:10.1109/SISPAD.2003.1233657

Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces

Tao Liang, W. Windl, S. Lopatin, G. Duscher

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

The atomic structure of the interface between Ge and SiO₂ - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO₂ interface with probably small fractions of Ge in the oxide.

Original language	English (US)
Title of host publication	SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	143-146
Number of pages	4
ISBN (Electronic)	0780378261
DOIs	https://doi.org/10.1109/SISPAD.2003.1233657
State	Published - 2003
Externally published	Yes
Event	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States Duration: Sep 3 2003 → Sep 5 2003

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2003-January

Other

Other	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
Country/Territory	United States
City	Boston
Period	09/3/03 → 09/5/03

Keywords

Atomic measurements
Educational institutions
Electrons
Image resolution
Impurities
Materials science and technology
Oxidation
Power engineering and energy
Semiconductor process modeling
Substrates

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Access to Document

10.1109/SISPAD.2003.1233657

Cite this

Liang, T., Windl, W., Lopatin, S., & Duscher, G. (2003). Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 143-146). Article 1233657 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233657

Liang, Tao ; Windl, W. ; Lopatin, S. et al. / Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 143-146 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{f68fb12d2fa34c21a6d7998aeb5ec932,

title = "Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces",

abstract = "The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.",

keywords = "Atomic measurements, Educational institutions, Electrons, Image resolution, Impurities, Materials science and technology, Oxidation, Power engineering and energy, Semiconductor process modeling, Substrates",

author = "Tao Liang and W. Windl and S. Lopatin and G. Duscher",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 ; Conference date: 03-09-2003 Through 05-09-2003",

year = "2003",

doi = "10.1109/SISPAD.2003.1233657",

language = "English (US)",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "143--146",

booktitle = "SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices",

address = "United States",

}

Liang, T, Windl, W, Lopatin, S & Duscher, G 2003, Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. in SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices., 1233657, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 143-146, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, United States, 09/3/03. https://doi.org/10.1109/SISPAD.2003.1233657

Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. / Liang, Tao; Windl, W.; Lopatin, S. et al.
SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 143-146 1233657 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces

AU - Liang, Tao

AU - Windl, W.

AU - Lopatin, S.

AU - Duscher, G.

PY - 2003

Y1 - 2003

N2 - The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.

AB - The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.

KW - Atomic measurements

KW - Educational institutions

KW - Electrons

KW - Image resolution

KW - Impurities

KW - Materials science and technology

KW - Oxidation

KW - Power engineering and energy

KW - Semiconductor process modeling

KW - Substrates

UR - http://www.scopus.com/inward/record.url?scp=84943239122&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2003.1233657

DO - 10.1109/SISPAD.2003.1233657

M3 - Conference contribution

AN - SCOPUS:84943239122

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 143

EP - 146

BT - SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003

Y2 - 3 September 2003 through 5 September 2003

ER -

Liang T, Windl W, Lopatin S, Duscher G. Investigation of the detailed structure of atomically sharp Ge/SiO₂ interfaces. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc. 2003. p. 143-146. 1233657. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2003.1233657