Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

Ts Ivanov; K. Borissov; J P R David; V. Donchev; K. Germanova; V. Hongpinyo; Boon S. Ooi; Ts Tellaleva; P. Vines

doi:10.1088/1742-6596/356/1/012032

Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

Ts Ivanov, K. Borissov, J P R David, V. Donchev, K. Germanova, V. Hongpinyo, Boon S. Ooi, Ts Tellaleva, P. Vines

King Abdullah University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

A detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. © Published under licence by IOP Publishing Ltd.

Original language	English (US)
Title of host publication	Journal of Physics: Conference Series
Publisher	IOP Publishing
Pages	012032
DOIs	https://doi.org/10.1088/1742-6596/356/1/012032
State	Published - Mar 29 2012

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10.1088/1742-6596/356/1/012032

https://repository.kaust.edu.sa/bitstream/10754/312987/1/1742-6596_356_1_012032.pdf

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Ivanov, T., Borissov, K., David, J. P. R., Donchev, V., Germanova, K., Hongpinyo, V., Ooi, B. S., Tellaleva, T., & Vines, P. (2012). Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors. In Journal of Physics: Conference Series (pp. 012032). IOP Publishing. https://doi.org/10.1088/1742-6596/356/1/012032

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title = "Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors",

abstract = "A detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. {\textcopyright} Published under licence by IOP Publishing Ltd.",

author = "Ts Ivanov and K. Borissov and David, {J P R} and V. Donchev and K. Germanova and V. Hongpinyo and Ooi, {Boon S.} and Ts Tellaleva and P. Vines",

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year = "2012",

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doi = "10.1088/1742-6596/356/1/012032",

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Ivanov, T, Borissov, K, David, JPR, Donchev, V, Germanova, K, Hongpinyo, V, Ooi, BS, Tellaleva, T & Vines, P 2012, Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors. in Journal of Physics: Conference Series. IOP Publishing, pp. 012032. https://doi.org/10.1088/1742-6596/356/1/012032

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T1 - Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

AU - Ivanov, Ts

AU - Borissov, K.

AU - David, J P R

AU - Donchev, V.

AU - Germanova, K.

AU - Hongpinyo, V.

AU - Ooi, Boon S.

AU - Tellaleva, Ts

AU - Vines, P.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2012/3/29

Y1 - 2012/3/29

N2 - A detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. © Published under licence by IOP Publishing Ltd.

AB - A detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. © Published under licence by IOP Publishing Ltd.

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DO - 10.1088/1742-6596/356/1/012032

M3 - Conference contribution

SP - 012032

BT - Journal of Physics: Conference Series

PB - IOP Publishing

ER -

Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

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