We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
|Original language||English (US)|
|Title of host publication||Optics InfoBase Conference Papers|
|Publisher||Optica Publishing Group (formerly OSA)|
|State||Published - Jan 1 2016|