Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil; Yiyu Ou; Daisuke Iida; Oleksii Kopylov; Haiyan Ou

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil, Yiyu Ou, Daisuke Iida, Oleksii Kopylov, Haiyan Ou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

Original language	English (US)
Title of host publication	Optics InfoBase Conference Papers
Publisher	Optica Publishing Group (formerly OSA)
State	Published - Jan 1 2016
Externally published	Yes

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title = "Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization",

abstract = "We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.",

author = "Ahmed Fadil and Yiyu Ou and Daisuke Iida and Oleksii Kopylov and Haiyan Ou",

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T1 - Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

AU - Fadil, Ahmed

AU - Ou, Yiyu

AU - Iida, Daisuke

AU - Kopylov, Oleksii

AU - Ou, Haiyan

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

AB - We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

UR - http://www.scopus.com/inward/record.url?scp=85136577460&partnerID=8YFLogxK

M3 - Conference contribution

BT - Optics InfoBase Conference Papers

PB - Optica Publishing Group (formerly OSA)

ER -

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Abstract

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