We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
|Title of host publication
|2016 Conference on Lasers and Electro-Optics, CLEO 2016
|Institute of Electrical and Electronics Engineers Inc.
|Published - Dec 16 2016