Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil; Yiyu Ou; Daisuke Iida; Oleksii Kopylov; Haiyan Ou

doi:10.1364/cleo_si.2016.stu3r.6

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil, Yiyu Ou, Daisuke Iida, Oleksii Kopylov, Haiyan Ou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

Original language	English (US)
Title of host publication	2016 Conference on Lasers and Electro-Optics, CLEO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580118
DOIs	https://doi.org/10.1364/cleo_si.2016.stu3r.6
State	Published - Dec 16 2016
Externally published	Yes

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10.1364/cleo_si.2016.stu3r.6

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title = "Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization",

abstract = "We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.",

author = "Ahmed Fadil and Yiyu Ou and Daisuke Iida and Oleksii Kopylov and Haiyan Ou",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2016",

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doi = "10.1364/cleo_si.2016.stu3r.6",

language = "English (US)",

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T1 - Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

AU - Fadil, Ahmed

AU - Ou, Yiyu

AU - Iida, Daisuke

AU - Kopylov, Oleksii

AU - Ou, Haiyan

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2016/12/16

Y1 - 2016/12/16

N2 - We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

AB - We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

UR - https://opg.optica.org/abstract.cfm?URI=CLEO_SI-2016-STu3R.6

UR - http://www.scopus.com/inward/record.url?scp=85010693127&partnerID=8YFLogxK

U2 - 10.1364/cleo_si.2016.stu3r.6

DO - 10.1364/cleo_si.2016.stu3r.6

M3 - Conference contribution

SN - 9781943580118

BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Abstract

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