Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

Fu-He Hsiao; Tzu-Yi Lee; Wen-Chien Miao; Yi-Hua Pai; Daisuke Iida; Chun-Liang Lin; Fang-Chung Chen; Chi-Wai Chow; Chien-Chung Lin; Ray-Hua Horng; Jr-Hau He; Kazuhiro Ohkawa; Yu-Heng Hong; Chiao-Yun Chang; Hao-Chung Kuo

doi:10.1186/s11671-023-03871-z

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

Fu-He Hsiao, Tzu-Yi Lee, Wen-Chien Miao, Yi-Hua Pai, Daisuke Iida, Chun-Liang Lin, Fang-Chung Chen, Chi-Wai Chow, Chien-Chung Lin, Ray-Hua Horng, Jr-Hau He, Kazuhiro Ohkawa, Yu-Heng Hong, Chiao-Yun Chang, Hao-Chung Kuo

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

Original language	English (US)
Journal	Discover Nano
Volume	18
Issue number	1
DOIs	https://doi.org/10.1186/s11671-023-03871-z
State	Published - Jul 27 2023

Access to Document

10.1186/s11671-023-03871-z

https://repository.kaust.edu.sa/bitstream/10754/693306/1/s11671-023-03871-z.pdf

Cite this

Hsiao, F.-H., Lee, T.-Y., Miao, W.-C., Pai, Y.-H., Iida, D., Lin, C.-L., Chen, F.-C., Chow, C.-W., Lin, C.-C., Horng, R.-H., He, J.-H., Ohkawa, K., Hong, Y.-H., Chang, C.-Y., & Kuo, H.-C. (2023). Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications. Discover Nano, 18(1). https://doi.org/10.1186/s11671-023-03871-z

@article{08e31eaaad4242a7b1e80a2a396f9a05,

title = "Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.",

abstract = "In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.",

author = "Fu-He Hsiao and Tzu-Yi Lee and Wen-Chien Miao and Yi-Hua Pai and Daisuke Iida and Chun-Liang Lin and Fang-Chung Chen and Chi-Wai Chow and Chien-Chung Lin and Ray-Hua Horng and Jr-Hau He and Kazuhiro Ohkawa and Yu-Heng Hong and Chiao-Yun Chang and Hao-Chung Kuo",

note = "KAUST Repository Item: Exported on 2023-07-31 Acknowledgements: This research was funded by the Ministry of Science and Technology in Taiwan (Grant Nos. MOST 111-2124-M-A49-004-). The authors would like to gratefully acknowledge Prof. Kazuhiro Ohkawa from King Abdullah University of Science and Technology.",

year = "2023",

month = jul,

day = "27",

doi = "10.1186/s11671-023-03871-z",

language = "English (US)",

volume = "18",

journal = "Discover Nano",

issn = "2731-9229",

publisher = "SpringerOpen",

number = "1",

}

Hsiao, F-H, Lee, T-Y, Miao, W-C, Pai, Y-H, Iida, D, Lin, C-L, Chen, F-C, Chow, C-W, Lin, C-C, Horng, R-H, He, J-H, Ohkawa, K, Hong, Y-H, Chang, C-Y & Kuo, H-C 2023, 'Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.', Discover Nano, vol. 18, no. 1. https://doi.org/10.1186/s11671-023-03871-z

TY - JOUR

T1 - Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

AU - Hsiao, Fu-He

AU - Lee, Tzu-Yi

AU - Miao, Wen-Chien

AU - Pai, Yi-Hua

AU - Iida, Daisuke

AU - Lin, Chun-Liang

AU - Chen, Fang-Chung

AU - Chow, Chi-Wai

AU - Lin, Chien-Chung

AU - Horng, Ray-Hua

AU - He, Jr-Hau

AU - Ohkawa, Kazuhiro

AU - Hong, Yu-Heng

AU - Chang, Chiao-Yun

AU - Kuo, Hao-Chung

N1 - KAUST Repository Item: Exported on 2023-07-31 Acknowledgements: This research was funded by the Ministry of Science and Technology in Taiwan (Grant Nos. MOST 111-2124-M-A49-004-). The authors would like to gratefully acknowledge Prof. Kazuhiro Ohkawa from King Abdullah University of Science and Technology.

PY - 2023/7/27

Y1 - 2023/7/27

N2 - In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

AB - In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

UR - http://hdl.handle.net/10754/693306

UR - https://link.springer.com/10.1186/s11671-023-03871-z

U2 - 10.1186/s11671-023-03871-z

DO - 10.1186/s11671-023-03871-z

M3 - Article

C2 - 37498403

SN - 2731-9229

VL - 18

JO - Discover Nano

JF - Discover Nano

IS - 1

ER -

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

Abstract

Access to Document

Other files and links

Fingerprint

Cite this