Abstract
We show the effectiveness of wavy channel architecture for thin film transistor application for increased output current. This specific architecture allows increased width of the device by adopting a corrugated shape of the substrate without any further real estate penalty. The performance improvement is attributed not only to the increased transistor width, but also to enhanced applied electric field in the channel due to the wavy architecture.
Original language | English (US) |
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Title of host publication | ECS Transactions |
Publisher | The Electrochemical Society |
Pages | 191-198 |
Number of pages | 8 |
ISBN (Print) | 9781607685395 |
DOIs | |
State | Published - May 22 2015 |