Irradiation effects on the structural and optical properties of single crystal β-Ga2O3

Chaoming Liu; Yonder Berencén; Jianqun Yang; Yidan Wei; Mao Wang; Ye Yuan; Chi Xu; Yufang Xie; Xingji Li; Shengqiang Zhou

doi:10.1088/1361-6641/aad8d1

Irradiation effects on the structural and optical properties of single crystal β-Ga₂O₃

Chaoming Liu, Yonder Berencén, Jianqun Yang, Yidan Wei, Mao Wang, Ye Yuan, Chi Xu, Yufang Xie, Xingji Li, Shengqiang Zhou

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

In the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal β-Ga₂O₃ at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO₄ and GaO₆ units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence (PL) emission bands are found to be mainly associated with gallium-oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the PL quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviors by varying the oxygen irradiation fluence.

Original language	English (US)
Article number	095022
Journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume	33
Issue number	9
DOIs	https://doi.org/10.1088/1361-6641/aad8d1
State	Published - Aug 23 2018

Keywords

ion irradiation
photoluminescence
radiation defect
β-GaO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1088/1361-6641/aad8d1

Cite this

@article{f37e679946024f82a4d6092cd9747f4a,

title = "Irradiation effects on the structural and optical properties of single crystal β-Ga2O3 ",

abstract = "In the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal β-Ga2O3 at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO4 and GaO6 units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence (PL) emission bands are found to be mainly associated with gallium-oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the PL quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviors by varying the oxygen irradiation fluence.",

keywords = "ion irradiation, photoluminescence, radiation defect, β-GaO",

author = "Chaoming Liu and Yonder Berenc{\'e}n and Jianqun Yang and Yidan Wei and Mao Wang and Ye Yuan and Chi Xu and Yufang Xie and Xingji Li and Shengqiang Zhou",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

month = aug,

day = "23",

doi = "10.1088/1361-6641/aad8d1",

language = "English (US)",

volume = "33",

journal = "SEMICONDUCTOR SCIENCE AND TECHNOLOGY",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "9",

}

TY - JOUR

T1 - Irradiation effects on the structural and optical properties of single crystal β-Ga2O3

AU - Liu, Chaoming

AU - Berencén, Yonder

AU - Yang, Jianqun

AU - Wei, Yidan

AU - Wang, Mao

AU - Yuan, Ye

AU - Xu, Chi

AU - Xie, Yufang

AU - Li, Xingji

AU - Zhou, Shengqiang

PY - 2018/8/23

Y1 - 2018/8/23

N2 - In the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal β-Ga2O3 at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO4 and GaO6 units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence (PL) emission bands are found to be mainly associated with gallium-oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the PL quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviors by varying the oxygen irradiation fluence.

AB - In the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal β-Ga2O3 at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO4 and GaO6 units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence (PL) emission bands are found to be mainly associated with gallium-oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the PL quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviors by varying the oxygen irradiation fluence.

KW - ion irradiation

KW - photoluminescence

KW - radiation defect

KW - β-GaO

UR - http://www.scopus.com/inward/record.url?scp=85053143310&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aad8d1

DO - 10.1088/1361-6641/aad8d1

M3 - Article

AN - SCOPUS:85053143310

SN - 0268-1242

VL - 33

JO - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

JF - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IS - 9

M1 - 095022

ER -