Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

Engineering

• Si Interface 66%
• Defects 66%
• Reduction 66%
• Silicon 66%
• Low-Temperature 33%
• Annealing 33%
• Dangling Bond 33%
• Energy Barrier 33%
• Hydrogenated Amorphous Silicon 33%
• Interface State 33%
• Si Surface 33%
• Interface Recombination 33%
• Deep Defect 33%
• Kinetic 33%

Material Science

• Crystalline Material 100%
• Defect 66%
• Liquid Films 33%
• Amorphous Silicon 33%