TY - JOUR
T1 - Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control
AU - Serna, Martha I.
AU - Yoo, Seong H.
AU - Moreno, Salvador
AU - Xi, Yang
AU - Oviedo, Juan Pablo
AU - Choi, Hyunjoo
AU - Alshareef, Husam N.
AU - Kim, Moon J.
AU - Minary-Jolandan, Majid
AU - Quevedo-Lopez, Manuel A.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The Authors want to thank the National Science Foundation- Division of Electrical,
Communications and Cyber Systems (Grant 1139986), Colciencias, Kookmin University, and
The Leading Foreign Research Institute Recruitment Program through the National Research
Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning(MSIP)
(Grant 2013K1A4A3055679).
PY - 2016/5/31
Y1 - 2016/5/31
N2 - A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.
AB - A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.
UR - http://hdl.handle.net/10754/611336
UR - http://pubs.acs.org/doi/abs/10.1021/acsnano.6b01636
UR - http://www.scopus.com/inward/record.url?scp=84976533803&partnerID=8YFLogxK
U2 - 10.1021/acsnano.6b01636
DO - 10.1021/acsnano.6b01636
M3 - Article
C2 - 27219117
SN - 1936-0851
VL - 10
SP - 6054
EP - 6061
JO - ACS Nano
JF - ACS Nano
IS - 6
ER -