Large-area multilayer molybdenum disulfide for 2D memristors

Pingping Zhuang, Han Yan, Bo Li, Chao Dou, Tian Ye, Changjie Zhou, Huili Zhu, Bo Tian, Yushan Chen, Dong Lin, Weiwei Cai, Daquan Yu, Jing Liu, Weiyi Lin

Research output: Contribution to journalArticlepeer-review


Resistive random access memories (RRAMs) using two-dimensional (2D) materials have delivered comparable switching performance with CMOS devices. However, devices risk short problems because of their ultra-thin body, thus yielding poorly. In this study, we realize high-yield RRAMs thanks to the synthesis of uniform large-area multilayer molybdenum disulfide by thermally decomposing ammonium tetrathiomolybdate. This top-down method has advantages over mainstream chemical vapor deposition, in which layer-by-layer epitaxy is forbidden when surface energy elevates. The resulting film surface roughness is down to 93.8 pm, and its lateral size can be scaled up to wafer scale. A yield value higher than 90% was estimated by testing 8 × 8 RRAM arrays, reaching nearly 100% in isolated devices. These devices show low operation voltages (∼1V) with low cycle-to-cycle and device-to-device variations (∼12%). We also observed stable resistive switching of multilayer films prepared at 400 °C. The large-area synthesis of uniform multilayer films makes it more feasible to use 2D semiconductors in practical RRAM technology for wafer-scale integration.
Original languageEnglish (US)
Pages (from-to)100353
JournalMaterials Today Nano
StatePublished - May 30 2023


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