Large ferroelectricity in Hf0.85Ce0.15O2−δ polycrystalline thin films via lattice expansion

Hangren Li; Jie Tu; Guoqiang Xi; Xiuqiao Liu; Xudong Liu; Siyuan Du; Dongfei Lu; Da Zu; Yuxuan Zhang; Qingxiao Wang; Dongxing Zheng; Xixiang Zhang; Jianjun Tian; Linxing Zhang

doi:10.1039/d4qi01558d

Large ferroelectricity in Hf_0.85Ce_0.15O_2−δ polycrystalline thin films via lattice expansion

Hangren Li, Jie Tu, Guoqiang Xi, Xiuqiao Liu, Xudong Liu, Siyuan Du, Dongfei Lu, Da Zu, Yuxuan Zhang, Qingxiao Wang, Dongxing Zheng, Xixiang Zhang, Jianjun Tian, Linxing Zhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The discovery of ferroelectricity in HfO₂-based thin films has strongly energized the field of integrated semiconductor devices. To expand the physical applications of HfO₂-based thin films, it is essential to urgently enhance their ferroelectric polarization. In this work, we have synthesized Hf_0.85Ce_0.15O_2−δ thin films with a large remanent polarization of 2P_r ∼ 69 μC cm⁻², which is the maximum of all HfO₂-based polycrystal thin films. The strong increase of the remanent polarization is caused by the significant lattice expansion triggered by the increase of Ce³⁺ content, which is controlled by temperature. Due to the increase of the lattice constant in the c-axis, the unit-cell volume expands from 132.16 Å³ to 137.66 Å³, inducing an increase in the distortion of ions along the direction of the polarization axis and leading to an increase in polarization. This finding is of significant practical importance for promoting HfO₂-based materials and their development in physical fields.

Original language	English (US)
Pages (from-to)	7535-7544
Number of pages	10
Journal	Inorganic Chemistry Frontiers
Volume	11
Issue number	21
DOIs	https://doi.org/10.1039/d4qi01558d
State	Published - Sep 23 2024

ASJC Scopus subject areas

Inorganic Chemistry

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title = "Large ferroelectricity in Hf0.85Ce0.15O2−δ polycrystalline thin films via lattice expansion",

abstract = "The discovery of ferroelectricity in HfO2-based thin films has strongly energized the field of integrated semiconductor devices. To expand the physical applications of HfO2-based thin films, it is essential to urgently enhance their ferroelectric polarization. In this work, we have synthesized Hf0.85Ce0.15O2−δ thin films with a large remanent polarization of 2Pr ∼ 69 μC cm−2, which is the maximum of all HfO2-based polycrystal thin films. The strong increase of the remanent polarization is caused by the significant lattice expansion triggered by the increase of Ce3+ content, which is controlled by temperature. Due to the increase of the lattice constant in the c-axis, the unit-cell volume expands from 132.16 {\AA}3 to 137.66 {\AA}3, inducing an increase in the distortion of ions along the direction of the polarization axis and leading to an increase in polarization. This finding is of significant practical importance for promoting HfO2-based materials and their development in physical fields.",

author = "Hangren Li and Jie Tu and Guoqiang Xi and Xiuqiao Liu and Xudong Liu and Siyuan Du and Dongfei Lu and Da Zu and Yuxuan Zhang and Qingxiao Wang and Dongxing Zheng and Xixiang Zhang and Jianjun Tian and Linxing Zhang",

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year = "2024",

month = sep,

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doi = "10.1039/d4qi01558d",

language = "English (US)",

volume = "11",

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T1 - Large ferroelectricity in Hf0.85Ce0.15O2−δ polycrystalline thin films via lattice expansion

AU - Li, Hangren

AU - Tu, Jie

AU - Xi, Guoqiang

AU - Liu, Xiuqiao

AU - Liu, Xudong

AU - Du, Siyuan

AU - Lu, Dongfei

AU - Zu, Da

AU - Zhang, Yuxuan

AU - Wang, Qingxiao

AU - Zheng, Dongxing

AU - Zhang, Xixiang

AU - Tian, Jianjun

AU - Zhang, Linxing

PY - 2024/9/23

Y1 - 2024/9/23

N2 - The discovery of ferroelectricity in HfO2-based thin films has strongly energized the field of integrated semiconductor devices. To expand the physical applications of HfO2-based thin films, it is essential to urgently enhance their ferroelectric polarization. In this work, we have synthesized Hf0.85Ce0.15O2−δ thin films with a large remanent polarization of 2Pr ∼ 69 μC cm−2, which is the maximum of all HfO2-based polycrystal thin films. The strong increase of the remanent polarization is caused by the significant lattice expansion triggered by the increase of Ce3+ content, which is controlled by temperature. Due to the increase of the lattice constant in the c-axis, the unit-cell volume expands from 132.16 Å3 to 137.66 Å3, inducing an increase in the distortion of ions along the direction of the polarization axis and leading to an increase in polarization. This finding is of significant practical importance for promoting HfO2-based materials and their development in physical fields.

AB - The discovery of ferroelectricity in HfO2-based thin films has strongly energized the field of integrated semiconductor devices. To expand the physical applications of HfO2-based thin films, it is essential to urgently enhance their ferroelectric polarization. In this work, we have synthesized Hf0.85Ce0.15O2−δ thin films with a large remanent polarization of 2Pr ∼ 69 μC cm−2, which is the maximum of all HfO2-based polycrystal thin films. The strong increase of the remanent polarization is caused by the significant lattice expansion triggered by the increase of Ce3+ content, which is controlled by temperature. Due to the increase of the lattice constant in the c-axis, the unit-cell volume expands from 132.16 Å3 to 137.66 Å3, inducing an increase in the distortion of ions along the direction of the polarization axis and leading to an increase in polarization. This finding is of significant practical importance for promoting HfO2-based materials and their development in physical fields.

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U2 - 10.1039/d4qi01558d

DO - 10.1039/d4qi01558d

M3 - Article

AN - SCOPUS:85205667987

SN - 2052-1545

VL - 11

SP - 7535

EP - 7544

JO - Inorganic Chemistry Frontiers

JF - Inorganic Chemistry Frontiers

IS - 21

ER -

Large ferroelectricity in Hf_0.85Ce_0.15O_2−δ polycrystalline thin films via lattice expansion

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