Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties

H. He; Chang S. Lao; Lih J. Chen; Dragomir Davidovic; Zhong L. Wang

doi:10.1021/ja0559193

Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties

H. He, Chang S. Lao, Lih J. Chen^*, Dragomir Davidovic, Zhong L. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

249 Scopus citations

Abstract

Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.

Original language	English (US)
Pages (from-to)	16376-16377
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	127
Issue number	47
DOIs	https://doi.org/10.1021/ja0559193
State	Published - Nov 30 2005
Externally published	Yes

ASJC Scopus subject areas

Catalysis
General Chemistry
Biochemistry
Colloid and Surface Chemistry

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10.1021/ja0559193

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@article{062b2a381035418a9951e1d28ddc5e56,

title = "Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties",

abstract = "Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.",

author = "H. He and Lao, {Chang S.} and Chen, {Lih J.} and Dragomir Davidovic and Wang, {Zhong L.}",

year = "2005",

month = nov,

day = "30",

doi = "10.1021/ja0559193",

language = "English (US)",

volume = "127",

pages = "16376--16377",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "47",

}

TY - JOUR

T1 - Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties

AU - He, H.

AU - Lao, Chang S.

AU - Chen, Lih J.

AU - Davidovic, Dragomir

AU - Wang, Zhong L.

PY - 2005/11/30

Y1 - 2005/11/30

N2 - Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.

AB - Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.

UR - http://www.scopus.com/inward/record.url?scp=28444476957&partnerID=8YFLogxK

U2 - 10.1021/ja0559193

DO - 10.1021/ja0559193

M3 - Article

C2 - 16305207

AN - SCOPUS:28444476957

SN - 0002-7863

VL - 127

SP - 16376

EP - 16377

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 47

ER -

Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties

Abstract

ASJC Scopus subject areas

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