Laser lift-off technique for freestanding GaN substrate using an in droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes

Daisuke Iida, Syunsuke Kawai, Nobuaki Ema, Takayoshi Tsuchiya, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (λ = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate. © 2014 AIP Publishing LLC.
Original languageEnglish (US)
JournalApplied Physics Letters
Volume105
Issue number7
DOIs
StatePublished - Aug 18 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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