Laser power and temperature dependent photoluminescence characteristics of annealed GaInNAs/GaAs quantum well

Ng Tien Khee; Yoon Soon Fatt; Fan Weijun

doi:10.1557/proc-799-z5.15

Laser power and temperature dependent photoluminescence characteristics of annealed GaInNAs/GaAs quantum well

Ng Tien Khee^*, Yoon Soon Fatt, Fan Weijun

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Photoluminescence (PL) of annealed GaInNAs quantum well (QW) with varying temperature and laser excitation intensity is measured to understand the low temperature PL properties of annealed 6 nm GaInNAs QW. The measurements show that localization effect still exist in the QW even after annealing. This effect is characterized by an activation energy of 11 meV below the e1 state, which is obtained from fitting the integrated PL intensity vs. temperature curve with a single-activation-energy (SAE) model. This center is suggested to be related to the main localization center below the el state that could be resulted by N or In compositional fluctuation even after annealing.

Original language	English (US)
Pages (from-to)	39-43
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	799
DOIs	https://doi.org/10.1557/proc-799-z5.15
State	Published - 2003
Externally published	Yes
Event	Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

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@article{f7f8e01f75e74fce8071d0327024bca5,

title = "Laser power and temperature dependent photoluminescence characteristics of annealed GaInNAs/GaAs quantum well",

abstract = "Photoluminescence (PL) of annealed GaInNAs quantum well (QW) with varying temperature and laser excitation intensity is measured to understand the low temperature PL properties of annealed 6 nm GaInNAs QW. The measurements show that localization effect still exist in the QW even after annealing. This effect is characterized by an activation energy of 11 meV below the e1 state, which is obtained from fitting the integrated PL intensity vs. temperature curve with a single-activation-energy (SAE) model. This center is suggested to be related to the main localization center below the el state that could be resulted by N or In compositional fluctuation even after annealing.",

author = "Khee, {Ng Tien} and Fatt, {Yoon Soon} and Fan Weijun",

year = "2003",

doi = "10.1557/proc-799-z5.15",

language = "English (US)",

volume = "799",

pages = "39--43",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications ; Conference date: 01-12-2003 Through 04-12-2003",

}

TY - JOUR

T1 - Laser power and temperature dependent photoluminescence characteristics of annealed GaInNAs/GaAs quantum well

AU - Khee, Ng Tien

AU - Fatt, Yoon Soon

AU - Weijun, Fan

PY - 2003

Y1 - 2003

N2 - Photoluminescence (PL) of annealed GaInNAs quantum well (QW) with varying temperature and laser excitation intensity is measured to understand the low temperature PL properties of annealed 6 nm GaInNAs QW. The measurements show that localization effect still exist in the QW even after annealing. This effect is characterized by an activation energy of 11 meV below the e1 state, which is obtained from fitting the integrated PL intensity vs. temperature curve with a single-activation-energy (SAE) model. This center is suggested to be related to the main localization center below the el state that could be resulted by N or In compositional fluctuation even after annealing.

AB - Photoluminescence (PL) of annealed GaInNAs quantum well (QW) with varying temperature and laser excitation intensity is measured to understand the low temperature PL properties of annealed 6 nm GaInNAs QW. The measurements show that localization effect still exist in the QW even after annealing. This effect is characterized by an activation energy of 11 meV below the e1 state, which is obtained from fitting the integrated PL intensity vs. temperature curve with a single-activation-energy (SAE) model. This center is suggested to be related to the main localization center below the el state that could be resulted by N or In compositional fluctuation even after annealing.

UR - http://www.scopus.com/inward/record.url?scp=3042639225&partnerID=8YFLogxK

U2 - 10.1557/proc-799-z5.15

DO - 10.1557/proc-799-z5.15

M3 - Conference article

AN - SCOPUS:3042639225

SN - 0272-9172

VL - 799

SP - 39

EP - 43

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications

Y2 - 1 December 2003 through 4 December 2003

ER -

Laser power and temperature dependent photoluminescence characteristics of annealed GaInNAs/GaAs quantum well

Abstract

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