La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories

B. A. Tuttle; H. N. Al-Shareef; W. L. Warren; M. V. Raymond; T. J. Headley; J. A. Voigt; J. Evans; R. Ramesh

doi:10.1016/0167-9317(95)00150-6

La_0.5Sr_0.5CoO₃ electrode technology for Pb(Zr,Ti)O₃ thin film nonvolatile memories

B. A. Tuttle^*, H. N. Al-Shareef, W. L. Warren, M. V. Raymond, T. J. Headley, J. A. Voigt, J. Evans, R. Ramesh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O₃ (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La_0.5Sr_0.5CoO₃ (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO₂ electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550°C or 675°C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 10¹⁰ cycles.

Original language	English (US)
Pages (from-to)	223-230
Number of pages	8
Journal	Microelectronic Engineering
Volume	29
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(95)00150-6
State	Published - Dec 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(95)00150-6

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@article{f3ed4d9862004bc6a3196c44c55bb036,

title = "La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories",

abstract = "Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O3 (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La0.5Sr0.5CoO3 (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO2 electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550°C or 675°C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 1010 cycles.",

author = "Tuttle, {B. A.} and Al-Shareef, {H. N.} and Warren, {W. L.} and Raymond, {M. V.} and Headley, {T. J.} and Voigt, {J. A.} and J. Evans and R. Ramesh",

year = "1995",

month = dec,

doi = "10.1016/0167-9317(95)00150-6",

language = "English (US)",

volume = "29",

pages = "223--230",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "ELSEVIER SCIENCE BV",

number = "1-4",

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TY - JOUR

T1 - La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories

AU - Tuttle, B. A.

AU - Al-Shareef, H. N.

AU - Warren, W. L.

AU - Raymond, M. V.

AU - Headley, T. J.

AU - Voigt, J. A.

AU - Evans, J.

AU - Ramesh, R.

PY - 1995/12

Y1 - 1995/12

N2 - Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O3 (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La0.5Sr0.5CoO3 (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO2 electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550°C or 675°C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 1010 cycles.

AB - Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O3 (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La0.5Sr0.5CoO3 (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO2 electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550°C or 675°C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 1010 cycles.

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U2 - 10.1016/0167-9317(95)00150-6

DO - 10.1016/0167-9317(95)00150-6

M3 - Article

AN - SCOPUS:0029490999

SN - 0167-9317

VL - 29

SP - 223

EP - 230

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

La_0.5Sr_0.5CoO₃ electrode technology for Pb(Zr,Ti)O₃ thin film nonvolatile memories

Abstract

ASJC Scopus subject areas

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