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Lateral heterojunctions between a first layer and a second layer of transition metal dichalcogenide
Lain-Jong Li (Inventor), Hao-Ling Tang (Inventor), Ming-Hui Chiu (Inventor)
Physical Sciences and Engineering
Material Science and Engineering
Research output
:
Patent
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Keyphrases
Transition Metal Dichalcogenides
100%
Lateral Heterojunction
100%
Transistor
66%
Field-effect Transistors
33%
Graphene
33%
Heterojunction
33%
Chemical Vapor Deposition
33%
Performance Data
33%
P-type Doping
33%
Graphene Layer
33%
Low Resistance
33%
Material Science
Heterojunction
100%
Transition Metal Dichalcogenides
100%
Transistor
66%
Graphene
66%
Contact Resistance
33%
Field Effect Transistors
33%
Chemical Vapor Deposition
33%
Engineering
Heterojunctions
100%
Transition Metal Dichalcogenide
100%
Field-Effect Transistor
33%
Layer Graphene
33%
Performance Data
33%
Graphene
33%
Vapor Deposition
33%
Chemical Vapor Deposition
33%