Lateral IMPATT diodes in standard CMOS technology

Talal Al-Attar*, Michael D. Mulligan, Thomas H. Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations


We investigate the use of a lateral IMPATT diode built in 0.25μm CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.

Original languageEnglish (US)
Pages (from-to)459-462
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - 2004
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: Dec 13 2004Dec 15 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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