Lateral IMPATT diodes in standard CMOS technology

Talal Al-Attar; Michael D. Mulligan; Thomas H. Lee

Lateral IMPATT diodes in standard CMOS technology

Talal Al-Attar^*, Michael D. Mulligan, Thomas H. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

We investigate the use of a lateral IMPATT diode built in 0.25μm CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.

Original language	English (US)
Pages (from-to)	459-462
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 2004
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: Dec 13 2004 → Dec 15 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Lateral IMPATT diodes in standard CMOS technology",

abstract = "We investigate the use of a lateral IMPATT diode built in 0.25μm CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.",

author = "Talal Al-Attar and Mulligan, {Michael D.} and Lee, {Thomas H.}",

note = "Funding Information: The authors would like to thank Robert Bosch Corporation for financially supporting part of this work, National Semiconductor for fabricating the diodes, and Anritsu for providing access to the 110 GHz VNA.; IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

year = "2004",

language = "English (US)",

pages = "459--462",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Lateral IMPATT diodes in standard CMOS technology

AU - Al-Attar, Talal

AU - Mulligan, Michael D.

AU - Lee, Thomas H.

N1 - Funding Information: The authors would like to thank Robert Bosch Corporation for financially supporting part of this work, National Semiconductor for fabricating the diodes, and Anritsu for providing access to the 110 GHz VNA.

PY - 2004

Y1 - 2004

N2 - We investigate the use of a lateral IMPATT diode built in 0.25μm CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.

AB - We investigate the use of a lateral IMPATT diode built in 0.25μm CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.

UR - http://www.scopus.com/inward/record.url?scp=21644440909&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:21644440909

SN - 0163-1918

SP - 459

EP - 462

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Lateral IMPATT diodes in standard CMOS technology

Abstract

ASJC Scopus subject areas

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