Lateral self-aligned p-type in 2O 3 nanowire arrays epitaxially grown on Si substrates

C. L. Hsin; J. H. He; C. Y. Lee; W. W. Wu; P. H. Yeh; L. J. Chen; Z. L. Wang

doi:10.1021/nl0707914

Lateral self-aligned p-type in ₂O ₃ nanowire arrays epitaxially grown on Si substrates

C. L. Hsin, J. H. He, C. Y. Lee, W. W. Wu, P. H. Yeh, L. J. Chen^*, Z. L. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

Lateral orientated growth of In ₂O ₃ nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In ₂O ₃ NWs and NRs were grown along [21̄1̄] in parallel to the Si ±[11̄0] and lying in the substrate plane. The electrical measurements show that the In ₂O ₃ NWs are p-type semiconductor. By N ⁺ doping, the resistivity of the In ₂O ₃ NWs has been tuned. The lateral self-aligned In ₂O ₃ NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.

Original language	English (US)
Pages (from-to)	1799-1803
Number of pages	5
Journal	Nano Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1021/nl0707914
State	Published - Jun 2007
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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title = "Lateral self-aligned p-type in 2O 3 nanowire arrays epitaxially grown on Si substrates",

abstract = "Lateral orientated growth of In 2O 3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In 2O 3 NWs and NRs were grown along [2{\=1}{\=1}] in parallel to the Si ±[1{\=1}0] and lying in the substrate plane. The electrical measurements show that the In 2O 3 NWs are p-type semiconductor. By N + doping, the resistivity of the In 2O 3 NWs has been tuned. The lateral self-aligned In 2O 3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.",

author = "Hsin, {C. L.} and He, {J. H.} and Lee, {C. Y.} and Wu, {W. W.} and Yeh, {P. H.} and Chen, {L. J.} and Wang, {Z. L.}",

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month = jun,

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language = "English (US)",

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issn = "1530-6984",

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T1 - Lateral self-aligned p-type in 2O 3 nanowire arrays epitaxially grown on Si substrates

AU - Hsin, C. L.

AU - He, J. H.

AU - Lee, C. Y.

AU - Wu, W. W.

AU - Yeh, P. H.

AU - Chen, L. J.

AU - Wang, Z. L.

PY - 2007/6

Y1 - 2007/6

N2 - Lateral orientated growth of In 2O 3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In 2O 3 NWs and NRs were grown along [21̄1̄] in parallel to the Si ±[11̄0] and lying in the substrate plane. The electrical measurements show that the In 2O 3 NWs are p-type semiconductor. By N + doping, the resistivity of the In 2O 3 NWs has been tuned. The lateral self-aligned In 2O 3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.

AB - Lateral orientated growth of In 2O 3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In 2O 3 NWs and NRs were grown along [21̄1̄] in parallel to the Si ±[11̄0] and lying in the substrate plane. The electrical measurements show that the In 2O 3 NWs are p-type semiconductor. By N + doping, the resistivity of the In 2O 3 NWs has been tuned. The lateral self-aligned In 2O 3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.

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JO - Nano Letters

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Lateral self-aligned p-type in ₂O ₃ nanowire arrays epitaxially grown on Si substrates

Abstract

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