Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

Yao Wang, Qingyun Zhang, Qian Shen, Yingchun Cheng, Udo Schwingenschlögl, Wei Huang

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.
Original languageEnglish (US)
Pages (from-to)4520-4525
Number of pages6
JournalJ. Mater. Chem. C
Issue number18
StatePublished - Apr 12 2017


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