Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method

Yun Xu; Yuzhang Li; Guofeng Song; Qiaoqiang Gan; Qing Cao; Liang Guo; Lianghui Chen

doi:10.1117/12.636130

Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method

Yun Xu, Yuzhang Li, Guofeng Song, Qiaoqiang Gan, Qing Cao, Liang Guo, Lianghui Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
DOIs	https://doi.org/10.1117/12.636130
State	Published - Dec 1 2005
Externally published	Yes

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title = "Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method",

abstract = "In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.",

author = "Yun Xu and Yuzhang Li and Guofeng Song and Qiaoqiang Gan and Qing Cao and Liang Guo and Lianghui Chen",

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doi = "10.1117/12.636130",

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T1 - Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method

AU - Xu, Yun

AU - Li, Yuzhang

AU - Song, Guofeng

AU - Gan, Qiaoqiang

AU - Cao, Qing

AU - Guo, Liang

AU - Chen, Lianghui

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2005/12/1

Y1 - 2005/12/1

N2 - In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.

AB - In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.

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UR - http://www.scopus.com/inward/record.url?scp=33644978106&partnerID=8YFLogxK

U2 - 10.1117/12.636130

DO - 10.1117/12.636130

M3 - Conference contribution

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method

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