Leakage current analysis of high power AlGaInP lasers

Yun Xu, Yuzhang Li, Guofeng Song, Qiaoqiang Gan, Guohua Yang, Yulian Cao, Qing Cao, Liang Guo, Lianghui Chen

Research output: Contribution to journalArticlepeer-review


In AlGalnP/GalnP multi-quantum well (MQW) lasers, the injected electrons will surmount the potential barrier between the active layer's quasi-Fermi level and the conduction band of the p-cladding layer in the high injection or high temperature condition, resulting in the leakage current, which seriously deteriorate the output parameters of laser diodes. In this letter, the effective electron potential was estimated by testing the change of threshold current and differential quantum efficiency with temperature, and was compared with theoretical simulation results. Consequently, the influence of the p-cladding layer's concentration on the effective potential height was discussed.
Original languageEnglish (US)
Pages (from-to)299-303
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Issue numberSUPPL.
StatePublished - Dec 1 2006
Externally publishedYes

ASJC Scopus subject areas

  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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