Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric

Zhen Cheng Wu; Chiu Chih Chiang; Wei Hao Wu; Mao Chieh Chen; Shwang Ming Jeng; Lain Jong Li; Syun Ming Jang; Chen Hua Yu; Mong Song Liang

doi:10.1109/55.924836

Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric

Zhen Cheng Wu^*, Chiu Chih Chiang, Wei Hao Wu, Mao Chieh Chen, Shwang Ming Jeng, Lain Jong Li, Syun Ming Jang, Chen Hua Yu, Mong Song Liang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD). The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL). In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG. An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme.

Original language	English (US)
Pages (from-to)	263-265
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	6
DOIs	https://doi.org/10.1109/55.924836
State	Published - Jun 2001
Externally published	Yes

Keywords

CVD oxides
Copper
Damascene structures
Frenkel-Poole (F-P) emission
Low-k dielectrics
Methylsilane
Organosilicate glass (OSG)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.924836

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@article{0c8ded077e6b415e963b4e8c34426d84,

title = "Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric",

abstract = "This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD). The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL). In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG. An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme.",

keywords = "CVD oxides, Copper, Damascene structures, Frenkel-Poole (F-P) emission, Low-k dielectrics, Methylsilane, Organosilicate glass (OSG)",

author = "Wu, {Zhen Cheng} and Chiang, {Chiu Chih} and Wu, {Wei Hao} and Chen, {Mao Chieh} and Jeng, {Shwang Ming} and Li, {Lain Jong} and Jang, {Syun Ming} and Yu, {Chen Hua} and Liang, {Mong Song}",

year = "2001",

month = jun,

doi = "10.1109/55.924836",

language = "English (US)",

volume = "22",

pages = "263--265",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric

AU - Wu, Zhen Cheng

AU - Chiang, Chiu Chih

AU - Wu, Wei Hao

AU - Chen, Mao Chieh

AU - Jeng, Shwang Ming

AU - Li, Lain Jong

AU - Jang, Syun Ming

AU - Yu, Chen Hua

AU - Liang, Mong Song

PY - 2001/6

Y1 - 2001/6

N2 - This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD). The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL). In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG. An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme.

AB - This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD). The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL). In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG. An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme.

KW - CVD oxides

KW - Copper

KW - Damascene structures

KW - Frenkel-Poole (F-P) emission

KW - Low-k dielectrics

KW - Methylsilane

KW - Organosilicate glass (OSG)

UR - http://www.scopus.com/inward/record.url?scp=0035362458&partnerID=8YFLogxK

U2 - 10.1109/55.924836

DO - 10.1109/55.924836

M3 - Article

AN - SCOPUS:0035362458

SN - 0741-3106

VL - 22

SP - 263

EP - 265

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric

Abstract

Keywords

ASJC Scopus subject areas

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