@inproceedings{4cca3ae734464119a383d718acd98a54,
title = "Li-doped IrO2/Si heterojunctions for CMOS-integrated optoelectronics",
abstract = "The heterojunction of polycrystalline Li-doped IrO2, grown by pulsed laser deposition, and (100)-oriented Si is investigated to develop CMOS-integrated compact optoelectronics. The grown films exhibited p-type conductivity with a bandgap value of around 3.15 eV. Energy-dispersive X-ray spectroscopy mapping confirmed the films{\textquoteright} composition. The hetero-integration of wide-bandgap metal oxides on Si extends the scalability of CMOS-compatible optoelectronics and power electronics, paving the way for enhanced optoelectronic processes and miniaturized photonic circuits.",
keywords = "CMOS, integrated optoelectronics, Iridium oxide (IrO), oxide semiconductors, power electronics",
author = "Abdullah Alquwayzani and Laurentiu Braic and Hedhili, {Mohamed N.} and Ng, {Tien Khee} and Nasir Alfaraj and Ooi, {Boon S.}",
note = "Publisher Copyright: {\textcopyright} 2024 SPIE.; Oxide-Based Materials and Devices XV 2024 ; Conference date: 29-01-2024 Through 01-02-2024",
year = "2024",
doi = "10.1117/12.3001163",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Rogers, {David J.} and Teherani, {Ferechteh H.}",
booktitle = "Oxide-Based Materials and Devices XV",
address = "United States",
}