Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate

Y. L. Chueh*, L. J. Chou, S. L. Cheng, Jr-Hau He, W. W. Wu, L. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.

Original languageEnglish (US)
JournalElectrochemical and Solid-State Letters
Issue number6
StatePublished - Jul 4 2005

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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