Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate

Y. L. Chueh; L. J. Chou; S. L. Cheng; Jr-Hau He; W. W. Wu; L. J. Chen

doi:10.1149/1.1896468

Light-emitting β-Fe(Si_XGe_1-x)2 nanodots on Si_0.8Ge_0.2 substrate

Y. L. Chueh^*, L. J. Chou, S. L. Cheng, Jr-Hau He, W. W. Wu, L. J. Chen

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Uniformly distributed dome-shaped β-Fe(Si_xGe _1-x)₂ nanodots synthesized on Si_0.8Ge _0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(Si_xGe_1-x)₂ nanodots grown epitaxial on Si_0.8Ge_0.2 substrate.

Original language	English (US)
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	6
DOIs	https://doi.org/10.1149/1.1896468
State	Published - Jul 4 2005

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.1896468

Cite this

@article{73c40cacc6654e819bf2ceda4ace03f3,

title = "Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate",

abstract = "Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.",

author = "Chueh, {Y. L.} and Chou, {L. J.} and Cheng, {S. L.} and Jr-Hau He and Wu, {W. W.} and Chen, {L. J.}",

year = "2005",

month = jul,

day = "4",

doi = "10.1149/1.1896468",

language = "English (US)",

volume = "8",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society",

number = "6",

}

TY - JOUR

T1 - Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate

AU - Chueh, Y. L.

AU - Chou, L. J.

AU - Cheng, S. L.

AU - He, Jr-Hau

AU - Wu, W. W.

AU - Chen, L. J.

PY - 2005/7/4

Y1 - 2005/7/4

N2 - Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.

AB - Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.

UR - http://www.scopus.com/inward/record.url?scp=20844438731&partnerID=8YFLogxK

U2 - 10.1149/1.1896468

DO - 10.1149/1.1896468

M3 - Article

AN - SCOPUS:20844438731

SN - 1099-0062

VL - 8

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Light-emitting β-Fe(Si_XGe_1-x)2 nanodots on Si_0.8Ge_0.2 substrate

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this