Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate

Y. L. Chueh; L. J. Chou; S. L. Cheng; J. H. He; W. W. Wu; L. J. Chen

doi:10.1149/1.1896468

Light-emitting β-Fe(Si_XGe_1-x)2 nanodots on Si_0.8Ge_0.2 substrate

Y. L. Chueh^*, L. J. Chou, S. L. Cheng, J. H. He, W. W. Wu, L. J. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Uniformly distributed dome-shaped β-Fe(Si_xGe _1-x)₂ nanodots synthesized on Si_0.8Ge _0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(Si_xGe_1-x)₂ nanodots grown epitaxial on Si_0.8Ge_0.2 substrate.

Original language	English (US)
Pages (from-to)	G137-G139
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	6
DOIs	https://doi.org/10.1149/1.1896468
State	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate",

abstract = "Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.",

author = "Chueh, {Y. L.} and Chou, {L. J.} and Cheng, {S. L.} and He, {J. H.} and Wu, {W. W.} and Chen, {L. J.}",

year = "2005",

doi = "10.1149/1.1896468",

language = "English (US)",

volume = "8",

pages = "G137--G139",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society",

number = "6",

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T1 - Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate

AU - Chueh, Y. L.

AU - Chou, L. J.

AU - Cheng, S. L.

AU - He, J. H.

AU - Wu, W. W.

AU - Chen, L. J.

PY - 2005

Y1 - 2005

N2 - Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.

AB - Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.

UR - http://www.scopus.com/inward/record.url?scp=20844438731&partnerID=8YFLogxK

U2 - 10.1149/1.1896468

DO - 10.1149/1.1896468

M3 - Article

AN - SCOPUS:20844438731

SN - 1099-0062

VL - 8

SP - G137-G139

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Light-emitting β-Fe(Si_XGe_1-x)2 nanodots on Si_0.8Ge_0.2 substrate

Abstract

ASJC Scopus subject areas

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