@inproceedings{595f21492e4041babb6b27f67692cc64,
title = "Light-induced degradation of very low resistivity multi-crystalline silicon solar cells",
abstract = "An JSc degradation under illumination has been measured for finished solar cells processed from multicrystalline B-doped Si-substrates with resistivities below 0.1 {\ss}cm. This phenomenon has been studied as function of the different applied processing steps and as function of the boron- and oxygen-concentration of the substrate. The observed effect is likely related to a reversible formation of boron-oxygen complexes, introducing traps in the bandgap. This behaviour is similar to what has been reported in literature for carrier lifetime instabilities of 1Ωcm Cz-Si. The degradation was found to be fully reversible by a low-temperature anneal at about 200°C, provided that the degradation causing defects have not been passivated by hydrog{\'e}nation.",
author = "{De Wolf}, Stefaan and P. Choulat and J. Szlufcik and I. P{\'e}richaud and S. Martinuzzi and C. H{\"a}{\ss}ler and W. Krumbe",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",
year = "2000",
doi = "10.1109/PVSC.2000.915751",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "53--56",
booktitle = "Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000",
address = "United States",
}