LILIT beamline for soft and deep X-ray lithography at Elettra

Filippo Romanato; Enzo Di Fabrizio; Lisa Vaccari; M. Altissimo; D. Cojoc; L. Businaro; Stefano Cabrini

doi:10.1016/S0167-9317(01)00534-2

LILIT beamline for soft and deep X-ray lithography at Elettra

Filippo Romanato^*, Enzo Di Fabrizio, Lisa Vaccari, M. Altissimo, D. Cojoc, L. Businaro, Stefano Cabrini

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

In this paper we present the beamline for X-ray lithography installed at ELETTRA (Trieste, Italy). The peculiarity of the beamline design consists mainly in its wide lithographic window. This is achieved by combining high-pass filters (Beryllium windows or other suitable material filters) with low-pass filters (mirrors at increasing angles of incidence). The design allows to change the spectral range of interest continuously, from the soft (around 1.5 keV) where we can achieve the highest lithographic resolution, to hard X-ray region (higher than 10 keV) where sensitive materials of thickness of tens of microns can be exposed.

Original language	English (US)
Pages (from-to)	101-107
Number of pages	7
Journal	Microelectronic Engineering
Volume	57-58
DOIs	https://doi.org/10.1016/S0167-9317(01)00534-2
State	Published - Sep 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(01)00534-2

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title = "LILIT beamline for soft and deep X-ray lithography at Elettra",

abstract = "In this paper we present the beamline for X-ray lithography installed at ELETTRA (Trieste, Italy). The peculiarity of the beamline design consists mainly in its wide lithographic window. This is achieved by combining high-pass filters (Beryllium windows or other suitable material filters) with low-pass filters (mirrors at increasing angles of incidence). The design allows to change the spectral range of interest continuously, from the soft (around 1.5 keV) where we can achieve the highest lithographic resolution, to hard X-ray region (higher than 10 keV) where sensitive materials of thickness of tens of microns can be exposed.",

author = "Filippo Romanato and {Di Fabrizio}, Enzo and Lisa Vaccari and M. Altissimo and D. Cojoc and L. Businaro and Stefano Cabrini",

year = "2001",

month = sep,

doi = "10.1016/S0167-9317(01)00534-2",

language = "English (US)",

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journal = "Microelectronic Engineering",

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T1 - LILIT beamline for soft and deep X-ray lithography at Elettra

AU - Romanato, Filippo

AU - Di Fabrizio, Enzo

AU - Vaccari, Lisa

AU - Altissimo, M.

AU - Cojoc, D.

AU - Businaro, L.

AU - Cabrini, Stefano

PY - 2001/9

Y1 - 2001/9

N2 - In this paper we present the beamline for X-ray lithography installed at ELETTRA (Trieste, Italy). The peculiarity of the beamline design consists mainly in its wide lithographic window. This is achieved by combining high-pass filters (Beryllium windows or other suitable material filters) with low-pass filters (mirrors at increasing angles of incidence). The design allows to change the spectral range of interest continuously, from the soft (around 1.5 keV) where we can achieve the highest lithographic resolution, to hard X-ray region (higher than 10 keV) where sensitive materials of thickness of tens of microns can be exposed.

AB - In this paper we present the beamline for X-ray lithography installed at ELETTRA (Trieste, Italy). The peculiarity of the beamline design consists mainly in its wide lithographic window. This is achieved by combining high-pass filters (Beryllium windows or other suitable material filters) with low-pass filters (mirrors at increasing angles of incidence). The design allows to change the spectral range of interest continuously, from the soft (around 1.5 keV) where we can achieve the highest lithographic resolution, to hard X-ray region (higher than 10 keV) where sensitive materials of thickness of tens of microns can be exposed.

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DO - 10.1016/S0167-9317(01)00534-2

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SN - 0167-9317

VL - 57-58

SP - 101

EP - 107

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

LILIT beamline for soft and deep X-ray lithography at Elettra

Abstract

ASJC Scopus subject areas

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