Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds

Mylène Sauty, Nicolas M.S. Lopes, Jean Philippe Banon, Yves Lassailly, Lucio Martinelli, Abdullah Alhassan, Yi Chao Chow, Shuji Nakamura, James S. Speck, Claude Weisbuch, Jacques Peretti

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Near-band-gap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples with more than 5% of indium drops by more than 1 order of magnitude when the temperature is decreased while it remains constant for lower indium content. This drop is attributed to a freezing of photoelectron transport in p-InGaN due to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is supported by the disappearance at low temperature of the peak in the photoemission spectrum that corresponds to the contribution of the photoelectrons relaxed at the bottom of the InGaN conduction band.
Original languageEnglish (US)
JournalPhysical Review Letters
Volume129
Issue number21
DOIs
StatePublished - Nov 18 2022
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds'. Together they form a unique fingerprint.

Cite this