Abstract
Pairs of bright spots aligned parallel to the cleaved sample edges are observed in micro-photoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. Structural characterization by atomic-force microscopy, plan-view and cross-section transmission electron microscopy reveal that the enhanced radiative recombination is induced by pairs of stacking faults intersecting the quantum wells. In the case of Frank-type stacking faults the wells are enlarged by up to 12 bilayers leading to an efficient exciton localization. This localization is much shallower in the case of Shockley-type stacking-fault pairs.
Original language | English (US) |
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Pages (from-to) | 189-192 |
Number of pages | 4 |
Journal | Physica Status Solidi (A) Applied Research |
Volume | 178 |
Issue number | 1 |
DOIs | |
State | Published - Mar 2000 |
Externally published | Yes |
Event | Optics of Excitons in Confined Systems (OECS-6) - Ascona, Switz Duration: Aug 30 1999 → Sep 2 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics