Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

David G. Molinero; Xi Luo; Chao Shen; Cristiano Palego; James Hwang; Charles L. Goldsmith

doi:10.1109/TDMR.2013.2246567

Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

David G. Molinero, Xi Luo, Chao Shen, Cristiano Palego, James Hwang, Charles L. Goldsmith

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

Original language	English (US)
Pages (from-to)	310-315
Number of pages	6
Journal	IEEE Transactions on Device and Materials Reliability
Volume	13
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2013.2246567
State	Published - Mar 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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abstract = "This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. {\textcopyright} 2001-2011 IEEE.",

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AU - Luo, Xi

AU - Shen, Chao

AU - Palego, Cristiano

AU - Hwang, James

AU - Goldsmith, Charles L.

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N2 - This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

AB - This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches. © 2001-2011 IEEE.

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Long-term RF burn-in effects on dielectric charging of MEMS capacitive switches

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