TY - JOUR
T1 - Low-cost high-quality crystalline germanium based flexible devices
AU - Nassar, Joanna M.
AU - Hussain, Aftab M.
AU - Rojas, Jhonathan Prieto
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008
Acknowledgements: We thank KAUST OCRF Competitive Research Grant (CRG) 1 CRG-1-2012-HUS-008 for supporting this research.
PY - 2014/6/16
Y1 - 2014/6/16
N2 - High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.
AB - High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.
UR - http://hdl.handle.net/10754/563599
UR - http://doi.wiley.com/10.1002/pssr.201409257
UR - http://www.scopus.com/inward/record.url?scp=84908246255&partnerID=8YFLogxK
U2 - 10.1002/pssr.201409257
DO - 10.1002/pssr.201409257
M3 - Article
SN - 1862-6254
VL - 08
SP - 794
EP - 800
JO - physica status solidi (RRL) - Rapid Research Letters
JF - physica status solidi (RRL) - Rapid Research Letters
IS - 09
ER -