Low damage and low surface roughness GaInP etching in Cl2/Ar electron cyclotron resonance process

S. F. Yoon; T. K. Ng; H. Q. Zheng

doi:10.1116/1.1396641

Low damage and low surface roughness GaInP etching in Cl₂/Ar electron cyclotron resonance process

S. F. Yoon^*, T. K. Ng, H. Q. Zheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Low damage and low surface roughness conditions for GaInP lattice matched to GaAs were obtained by electron cyclotron resonance Cl₂/Ar plasma etching characterization. The near-surface quality and etch rate of GaInP was characterized using micro-Raman spectroscopy, atomic force microscopy (AFM) and surface profiling. It was observed that near-surface damage increased with dc self-bias voltage in both Ar and Cl₂/Ar plasmas.

Original language	English (US)
Pages (from-to)	1775-1781
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	5
DOIs	https://doi.org/10.1116/1.1396641
State	Published - Sep 2001
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Low damage and low surface roughness GaInP etching in Cl2/Ar electron cyclotron resonance process",

abstract = "Low damage and low surface roughness conditions for GaInP lattice matched to GaAs were obtained by electron cyclotron resonance Cl2/Ar plasma etching characterization. The near-surface quality and etch rate of GaInP was characterized using micro-Raman spectroscopy, atomic force microscopy (AFM) and surface profiling. It was observed that near-surface damage increased with dc self-bias voltage in both Ar and Cl2/Ar plasmas.",

author = "Yoon, {S. F.} and Ng, {T. K.} and Zheng, {H. Q.}",

year = "2001",

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doi = "10.1116/1.1396641",

language = "English (US)",

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AU - Yoon, S. F.

AU - Ng, T. K.

AU - Zheng, H. Q.

PY - 2001/9

Y1 - 2001/9

N2 - Low damage and low surface roughness conditions for GaInP lattice matched to GaAs were obtained by electron cyclotron resonance Cl2/Ar plasma etching characterization. The near-surface quality and etch rate of GaInP was characterized using micro-Raman spectroscopy, atomic force microscopy (AFM) and surface profiling. It was observed that near-surface damage increased with dc self-bias voltage in both Ar and Cl2/Ar plasmas.

AB - Low damage and low surface roughness conditions for GaInP lattice matched to GaAs were obtained by electron cyclotron resonance Cl2/Ar plasma etching characterization. The near-surface quality and etch rate of GaInP was characterized using micro-Raman spectroscopy, atomic force microscopy (AFM) and surface profiling. It was observed that near-surface damage increased with dc self-bias voltage in both Ar and Cl2/Ar plasmas.

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U2 - 10.1116/1.1396641

DO - 10.1116/1.1396641

M3 - Article

AN - SCOPUS:0035440548

SN - 1071-1023

VL - 19

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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IS - 5

ER -

Low damage and low surface roughness GaInP etching in Cl₂/Ar electron cyclotron resonance process

Abstract

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