Abstract
The depth of the damage introduced by CH4/H2 RIE as a function of plasma power was measured. It was found to lie in the range 300 angstroms to 700 angstroms when the etching power was varied from 20 W to 100 W. A post etch anneal at 500 °C for 60 s, removed most of the damage. During this process point defects propagated into the epilayer causing quantum well intermixing in the deeper wells. A comparison of quantum well lasers fabricated by the RIE process with lasers fabricated using wet etching showed that the damage does not significantly affect the laser qualities provided a relatively low power etch process and post-dry-etch annealing were used.
Original language | English (US) |
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Pages (from-to) | 578-581 |
Number of pages | 4 |
Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA Duration: May 11 1997 → May 15 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering