Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

D. Inoue; Y. Wan; D. Jung; J. Norman; C. Shang; N. Nishiyama; S. Arai; A. C. Gossard; J. E. Bowers

doi:10.1063/1.5041908

Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, J. E. Bowers

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage of -3 V, which corresponds to a dark current density of 0.13 mA/cm2. This low-dark current characteristic obtained from a narrow-stripe device indicates that sidewall and threading dislocations have small effects on the dark current. The 3 dB bandwidth was 5.5 GHz at a bias voltage of -5 V. Large signal measurement with non-return-to-zero signals shows 10 Gbit/s eye opening.

Original language	English (US)
Journal	Applied Physics Letters
Volume	113
Issue number	9
DOIs	https://doi.org/10.1063/1.5041908
State	Published - Aug 27 2018
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5041908

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title = "Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si",

abstract = "We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage of -3 V, which corresponds to a dark current density of 0.13 mA/cm2. This low-dark current characteristic obtained from a narrow-stripe device indicates that sidewall and threading dislocations have small effects on the dark current. The 3 dB bandwidth was 5.5 GHz at a bias voltage of -5 V. Large signal measurement with non-return-to-zero signals shows 10 Gbit/s eye opening.",

author = "D. Inoue and Y. Wan and D. Jung and J. Norman and C. Shang and N. Nishiyama and S. Arai and Gossard, {A. C.} and Bowers, {J. E.}",

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doi = "10.1063/1.5041908",

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T1 - Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

AU - Inoue, D.

AU - Wan, Y.

AU - Jung, D.

AU - Norman, J.

AU - Shang, C.

AU - Nishiyama, N.

AU - Arai, S.

AU - Gossard, A. C.

AU - Bowers, J. E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2018/8/27

Y1 - 2018/8/27

N2 - We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage of -3 V, which corresponds to a dark current density of 0.13 mA/cm2. This low-dark current characteristic obtained from a narrow-stripe device indicates that sidewall and threading dislocations have small effects on the dark current. The 3 dB bandwidth was 5.5 GHz at a bias voltage of -5 V. Large signal measurement with non-return-to-zero signals shows 10 Gbit/s eye opening.

AB - We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage of -3 V, which corresponds to a dark current density of 0.13 mA/cm2. This low-dark current characteristic obtained from a narrow-stripe device indicates that sidewall and threading dislocations have small effects on the dark current. The 3 dB bandwidth was 5.5 GHz at a bias voltage of -5 V. Large signal measurement with non-return-to-zero signals shows 10 Gbit/s eye opening.

UR - https://pubs.aip.org/apl/article/113/9/093506/36367/Low-dark-current-10-Gbit-s-operation-of-InAs

UR - http://www.scopus.com/inward/record.url?scp=85052726991&partnerID=8YFLogxK

U2 - 10.1063/1.5041908

DO - 10.1063/1.5041908

M3 - Article

SN - 0003-6951

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

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