Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, J. E. Bowers

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage of -3 V, which corresponds to a dark current density of 0.13 mA/cm2. This low-dark current characteristic obtained from a narrow-stripe device indicates that sidewall and threading dislocations have small effects on the dark current. The 3 dB bandwidth was 5.5 GHz at a bias voltage of -5 V. Large signal measurement with non-return-to-zero signals shows 10 Gbit/s eye opening.
Original languageEnglish (US)
JournalApplied Physics Letters
Volume113
Issue number9
DOIs
StatePublished - Aug 27 2018
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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