Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

Baile Chen; Yating Wan; Zhiyang Xie; Jian Huang; Ningtao Zhang; Chen Shang; Justin Norman; Qiang Li; Yeyu Tong; Kei May Lau; Arthur C. Gossard; John E. Bowers

doi:10.1021/acsphotonics.9b01709

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

Baile Chen, Yating Wan, Zhiyang Xie, Jian Huang, Ningtao Zhang, Chen Shang, Justin Norman, Qiang Li, Yeyu Tong, Kei May Lau, Arthur C. Gossard, John E. Bowers

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.

Original language	English (US)
Pages (from-to)	528-533
Number of pages	6
Journal	ACS PHOTONICS
Volume	7
Issue number	2
DOIs	https://doi.org/10.1021/acsphotonics.9b01709
State	Published - Feb 19 2020
Externally published	Yes

ASJC Scopus subject areas

Biotechnology
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1021/acsphotonics.9b01709

Cite this

@article{a13380965b124ab2bff4fefcb670ebf0,

title = "Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si",

abstract = "Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.",

author = "Baile Chen and Yating Wan and Zhiyang Xie and Jian Huang and Ningtao Zhang and Chen Shang and Justin Norman and Qiang Li and Yeyu Tong and Lau, {Kei May} and Gossard, {Arthur C.} and Bowers, {John E.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2020",

month = feb,

day = "19",

doi = "10.1021/acsphotonics.9b01709",

language = "English (US)",

volume = "7",

pages = "528--533",

journal = "ACS PHOTONICS",

issn = "2330-4022",

publisher = "AMER CHEMICAL SOC",

number = "2",

}

TY - JOUR

T1 - Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

AU - Chen, Baile

AU - Wan, Yating

AU - Xie, Zhiyang

AU - Huang, Jian

AU - Zhang, Ningtao

AU - Shang, Chen

AU - Norman, Justin

AU - Li, Qiang

AU - Tong, Yeyu

AU - Lau, Kei May

AU - Gossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2020/2/19

Y1 - 2020/2/19

N2 - Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.

AB - Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.

UR - https://pubs.acs.org/doi/10.1021/acsphotonics.9b01709

UR - http://www.scopus.com/inward/record.url?scp=85078527476&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.9b01709

DO - 10.1021/acsphotonics.9b01709

M3 - Article

SN - 2330-4022

VL - 7

SP - 528

EP - 533

JO - ACS PHOTONICS

JF - ACS PHOTONICS

IS - 2

ER -

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this