Low-density self-assembled InGaAs QDs grown directly in a GaAs matrix for quantum-communication applications at 1300 nm wavelength

M. T. Todaro; V. Tasco; M. De Giorgi; M. De Vittorio; R. Cingolani; A. Passaseo; F. Romanato; E. Di Fabrizio

doi:10.1016/S0167-9317(04)00216-3

Low-density self-assembled InGaAs QDs grown directly in a GaAs matrix for quantum-communication applications at 1300 nm wavelength

M. T. Todaro^*, V. Tasco, M. De Giorgi, M. De Vittorio, R. Cingolani, A. Passaseo, F. Romanato, E. Di Fabrizio

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In this work we report on the morphological and optical properties of low-density self-assembled InGaAs quantum dots (QDs), suitable for quantum communication applications. The QDs are grown directly into a GaAs matrix by Stranski-Krastanov metal organic chemical vapour deposition, and emit at 1300 nm at room-temperature. We have studied the influence of the deposition rate on the morphological properties of the dots in order to obtain reproducible low-density samples. After the optimization of the growth conditions, we have fabricated, processed and preliminarily characterized a QD light-emitting diode, operating at 1300 nm, based on QDs with a density as low as 10⁹ cm^-2.

Original language	English (US)
Pages (from-to)	757-761
Number of pages	5
Journal	Microelectronic Engineering
Volume	73-74
DOIs	https://doi.org/10.1016/S0167-9317(04)00216-3
State	Published - Jun 2004
Externally published	Yes
Event	Micro and Nano Engineering 2003 - Cambridge, United Kingdom Duration: Sep 22 2003 → Sep 25 2003

Keywords

1300 nm
InGaAs/GaAs
Low-density
Quantum dots

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(04)00216-3

Cite this

@article{0299218ff3684cbc809df7c279c486ae,

title = "Low-density self-assembled InGaAs QDs grown directly in a GaAs matrix for quantum-communication applications at 1300 nm wavelength",

abstract = "In this work we report on the morphological and optical properties of low-density self-assembled InGaAs quantum dots (QDs), suitable for quantum communication applications. The QDs are grown directly into a GaAs matrix by Stranski-Krastanov metal organic chemical vapour deposition, and emit at 1300 nm at room-temperature. We have studied the influence of the deposition rate on the morphological properties of the dots in order to obtain reproducible low-density samples. After the optimization of the growth conditions, we have fabricated, processed and preliminarily characterized a QD light-emitting diode, operating at 1300 nm, based on QDs with a density as low as 109 cm-2.",

keywords = "1300 nm, InGaAs/GaAs, Low-density, Quantum dots",

author = "Todaro, {M. T.} and V. Tasco and {De Giorgi}, M. and {De Vittorio}, M. and R. Cingolani and A. Passaseo and F. Romanato and {Di Fabrizio}, E.",

year = "2004",

month = jun,

doi = "10.1016/S0167-9317(04)00216-3",

language = "English (US)",

volume = "73-74",

pages = "757--761",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "ELSEVIER SCIENCE BV",

note = "Micro and Nano Engineering 2003 ; Conference date: 22-09-2003 Through 25-09-2003",

}

TY - JOUR

T1 - Low-density self-assembled InGaAs QDs grown directly in a GaAs matrix for quantum-communication applications at 1300 nm wavelength

AU - Todaro, M. T.

AU - Tasco, V.

AU - De Giorgi, M.

AU - De Vittorio, M.

AU - Cingolani, R.

AU - Passaseo, A.

AU - Romanato, F.

AU - Di Fabrizio, E.

PY - 2004/6

Y1 - 2004/6

N2 - In this work we report on the morphological and optical properties of low-density self-assembled InGaAs quantum dots (QDs), suitable for quantum communication applications. The QDs are grown directly into a GaAs matrix by Stranski-Krastanov metal organic chemical vapour deposition, and emit at 1300 nm at room-temperature. We have studied the influence of the deposition rate on the morphological properties of the dots in order to obtain reproducible low-density samples. After the optimization of the growth conditions, we have fabricated, processed and preliminarily characterized a QD light-emitting diode, operating at 1300 nm, based on QDs with a density as low as 109 cm-2.

AB - In this work we report on the morphological and optical properties of low-density self-assembled InGaAs quantum dots (QDs), suitable for quantum communication applications. The QDs are grown directly into a GaAs matrix by Stranski-Krastanov metal organic chemical vapour deposition, and emit at 1300 nm at room-temperature. We have studied the influence of the deposition rate on the morphological properties of the dots in order to obtain reproducible low-density samples. After the optimization of the growth conditions, we have fabricated, processed and preliminarily characterized a QD light-emitting diode, operating at 1300 nm, based on QDs with a density as low as 109 cm-2.

KW - 1300 nm

KW - InGaAs/GaAs

KW - Low-density

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=2542437279&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(04)00216-3

DO - 10.1016/S0167-9317(04)00216-3

M3 - Conference article

AN - SCOPUS:2542437279

SN - 0167-9317

VL - 73-74

SP - 757

EP - 761

JO - Microelectronic Engineering

JF - Microelectronic Engineering

T2 - Micro and Nano Engineering 2003

Y2 - 22 September 2003 through 25 September 2003

ER -

Low-density self-assembled InGaAs QDs grown directly in a GaAs matrix for quantum-communication applications at 1300 nm wavelength

Abstract

Keywords

ASJC Scopus subject areas

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