TY - JOUR
T1 - Low-Frequency Nonresonant Rectification in Spin Diodes
AU - Tomasello, R.
AU - Fang, Bin
AU - Artemchuk, P.
AU - Carpentieri, M.
AU - Fasano, L.
AU - Giordano, A.
AU - Prokopenko, O.V.
AU - Zeng, Z.M.
AU - Finocchio, G.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work is supported under Grant No. 2019-1-U.0. (“Diodi spintronici rad-hard ad elevata sensitività - DIOSPIN”) funded by the Italian Space Agency (ASI) within the call “Nuove idee per la componentistica spaziale del futuro” and the Executive Programme of Scientific and Technological Cooperation Between Italy and China (2016YFE0104100). R.T. and G.F. also acknowledge project ThunderSKY, funded by the Hellenic Foundation for Research and Innovation (HFRI) and the General Secretariat for Research and Technology (GSRT), under Grant No. 871. P.A. and O.V.P. acknowledge Grants No.18BF052-01M and No. 19BF052-01 from the Ministry of Education and Science of Ukraine and Grant No. 1F from the National Academy of Sciences of Ukraine. This work is also supported by the PETASPIN association. Z.M.Z. acknowledges the National Science Foundation of China (Grant No. 11974379).
PY - 2020/8/17
Y1 - 2020/8/17
N2 - Spin diodes are usually resonant in nature (GHz frequency) and tunable by magnetic field and bias current with performances, in terms of sensitivity and minimum detectable power, overcoming the semiconductor counterpart, i.e., Schottky diodes. Recently, spin diodes characterized by a low-frequency detection (MHz frequency) have been proposed. Here, we show a strategy to design low-frequency detectors based on magnetic tunnel junctions with the interfacial perpendicular anisotropy of the same order of the demagnetizing field out-of-plane component. Micromagnetic calculations show that, to reach this detection regime, a threshold input power has to be overcome and the phase shift between the oscillation magnetoresistive signal and the input radiofrequency current plays a key role in determining the value of the rectification voltage.
AB - Spin diodes are usually resonant in nature (GHz frequency) and tunable by magnetic field and bias current with performances, in terms of sensitivity and minimum detectable power, overcoming the semiconductor counterpart, i.e., Schottky diodes. Recently, spin diodes characterized by a low-frequency detection (MHz frequency) have been proposed. Here, we show a strategy to design low-frequency detectors based on magnetic tunnel junctions with the interfacial perpendicular anisotropy of the same order of the demagnetizing field out-of-plane component. Micromagnetic calculations show that, to reach this detection regime, a threshold input power has to be overcome and the phase shift between the oscillation magnetoresistive signal and the input radiofrequency current plays a key role in determining the value of the rectification voltage.
UR - http://hdl.handle.net/10754/662529
UR - https://link.aps.org/doi/10.1103/PhysRevApplied.14.024043
U2 - 10.1103/physrevapplied.14.024043
DO - 10.1103/physrevapplied.14.024043
M3 - Article
SN - 2331-7019
VL - 14
JO - Physical Review Applied
JF - Physical Review Applied
IS - 2
ER -